F112R6A050SC datasheet(3/6 Pages) VINCOTECH

Part #	F112R6A050SC

Description	Very compact housing, easy to route

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Manufacturer	VINCOTECH [Vincotech]

Direct Link	http://www.vincotech.com

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F112R6A050SC

target datasheet

Parameter

Symbol

Unit

VGE [V] or

VGS [V]

Vr [V]

or

VCE [V] or

VDS [V]

IC [A] or

IF [A] or

ID [A]

Tj

Min

Typ

Max

Tj=25°C

1.11

1.7

Tj=125°C

1.04

Tj=25°C

0.91

Tj=125°C

0.78

Tj=25°C

4

Tj=125°C

5

Tj=25°C

0.05

Tj=125°C

1.1

Thermal resistance chip to heatsink per chip

RthJH

0.74

Thermal resistance chip to heatsink per chip

RthJC

0.49

Tj=25°C

5

5.8

6.5

Tj=150°C

Tj=25°C

1.86

2.3

Tj=150°C

2.3

Tj=25°C

0.02

Tj=150°C

Tj=25°C

200

Tj=150°C

Tj=25°C

104

Tj=150°C

100

Tj=25°C

19

Tj=150°C

23.8

Tj=25°C

220

Tj=150°C

295

Tj=25°C

78

Tj=150°C

118

Tj=25°C

2.86

Tj=150°C

4.5

Tj=25°C

2.69

Tj=150°C

4.48

Thermal resistance chip to heatsink per chip

RthJH

0.58

Thermal resistance chip to case per chip

RthJC

0.38

Tj=25°C

1.35

1.90

2.35

Tj=150°C

1.91

Tj=25°C

Tj=150°C

16.06

Tj=25°C

Tj=150°C

433.4

Tj=25°C

Tj=150°C

2.75

di(rec)max

Tj=25°C

/dt

Tj=150°C

109

Tj=25°C

Tj=150°C

1.16

Thermal resistance chip to heatsink per chip

RthJH

2.52

Thermal resistance chip to case per chip

RthJC

tbd.

Thermal grease

thickness

≤50um

λ = 1 W/mK

4

Tj=25°C

290

2770

V

15

±15

0

tr

td(off)

VCE=VGE

Thermal grease

thickness

≤50um

λ = 1 W/mK

QGate

Erec

Coss

Crss

Qrr

trr

IGES

tf

Eon

Eoff

td(on)

IRRM

VF

VGE(th)

VCE(sat)

ICES

Rgint

Input capacitance

Output capacitance

Turn-off energy loss per pulse

Integrated Gate resistor

Inverter Transistor

Gate emitter threshold voltage

Value

Conditions

Characteristic Values

Forward voltage

Threshold voltage (for power loss calc. only)

Slope resistance (for power loss calc. only)

VF

Vto

rt

Blocking Diode

50

K/W

V

m

Ω

mA

Reverse current

Ir

μC

mWs

A/

μs

K/W

f=1MHz

Rgon=8

Ω

0

20

15

Rgoff=8

Ω

±15

15

±15

Turn-on energy loss per pulse

Reverse recovered charge

Inverter Diode

Peak reverse recovery current

Reverse transfer capacitance

Diode forward voltage

Gate charge

Cies

Reverse recovery time

Reverse recovered energy

Peak rate of fall of recovery current

Collector-emitter cut-off current incl. Diode

Fall time

Turn-off delay time

Turn-on delay time

Rise time

Gate-emitter leakage current

Collector-emitter saturation voltage

1200

25

0

960

50

0.0017

600

1600

Thermal grease

thickness

≤50um

λ = 1 W/mK

Rgon=8

Ω

160

V

ns

A

nC

nA

K/W

V

205

mWs

ns

pF

mA

Ω

Tj=25°C

3

Revision: 3

Copyright by Vincotech

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