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V23990-K201-A-PM Datasheet(PDF) 3 Page - Vincotech |
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V23990-K201-A-PM Datasheet(HTML) 3 Page - Vincotech |
3 / 17 page V23990-K201-A-PM datasheet Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 1,51 Tj=125°C 1,42 Tj=25°C 0,86 Tj=125°C 0,79 Tj=25°C 0,03 Tj=125°C 0,03 Tj=25°C 0,05 Tj=125°C Thermal resistance chip to heatsink RthJH 1,50 Tj=25°C 5 2,8 6,5 Tj=150°C Tj=25°C 1,1 1,69 1,9 Tj=150°C 1,88 Tj=25°C 0,0004 Tj=150°C Tj=25°C 300 Tj=150°C Tj=25°C 21 Tj=150°C 20 Tj=25°C 13 Tj=150°C 17 Tj=25°C 152 Tj=150°C 170 Tj=25°C 98 Tj=150°C 103 Tj=25°C 0,155 Tj=150°C 0,209 Tj=25°C 0,133 Tj=150°C 0,168 Thermal resistance chip to heatsink RthJH 2,40 Tj=25°C 1,34 Tj=150°C 1,34 Tj=25°C 5,97 Tj=150°C 6,97 Tj=25°C 185 Tj=150°C 280 Tj=25°C 0,44 Tj=150°C 0,78 di(rec)max Tj=25°C 115 /dt Tj=150°C 37 Tj=25°C 0,082 Tj=150°C 0,154 Thermal resistance chip to heatsink RthJH 3,00 Thermal grease thickness≤50um λ =1 W/mK K/W Thermal grease thickness≤50um λ =1 W/mK K/W mA ns ns V A µC mWs A/µs T=25°C T=100°C T=100°C T=25°C 380 28 11 PTC D1,D2,D3,D4,D5,D6,D7 Erec Peak reverse recovery current Peak rate of fall of recovery current Reverse recovered charge Reverse recovery time Reverse recovered energy diF/dt=tbd A/us 50 0,0008 Thermal grease thickness≤50um λ =1 W/mK ∆R/R R100=1670 Rated resistance R Power dissipation constant Deviation of R100 mW/K R100 P 1670,313 25 0 ±15 300 6 Rgoff=32 Integrated Gate resistor T1,T2,T3,T4,T5,T6,T7 Gate emitter threshold voltage IRRM Diode forward voltage 6 600 Rgon=64 Gate-emitter leakage current 15 Reverse current Ir 1500 V V mA 25 K/W Characteristic Values Forward voltage Threshold voltage (for power loss calc. only) D8,D9,D10,D11,D12,D13 Value Slope resistance (for power loss calc. only) VF Vto rt Conditions 25 25 Input capacitance Output capacitance Turn-off energy loss per pulse Collector-emitter saturation voltage Turn-on energy loss per pulse Collector-emitter cut-off current incl. Diode Turn-off delay time Turn-on delay time Cies Qrr trr VF Rise time Eoff tr td(off) Fall time Reverse transfer capacitance VGE(th) VCE(sat) ICES VCE=VGE IGES f=1MHz td(on) Crss Coss Rgint tf Eon 0 0 20 3 -3 1000 % V V nA Tj=25°C - pF mWs A-value B(25/50) Tol. % T=25°C 7,635*10-3 1/K B-value B(25/100) Tol. % T=25°C 1,731*10-5 1/K² Vincotech NTC Reference E copyright Vincotech 3 Revision: 3 |
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