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V23990-K242-A-PM Datasheet(PDF) 3 Page - Vincotech |
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V23990-K242-A-PM Datasheet(HTML) 3 Page - Vincotech |
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3 / 17 page  V23990-K242-A-PM Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 0,8 1,02 1,35 Tj=125°C 0,94 Tj=25°C 0,88 Tj=125°C 0,75 Tj=25°C 4 Tj=125°C 6 Tj=25°C 0,1 Tj=125°C 2 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 0,90 K/W Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1,54 Tj=150°C 1,75 Tj=25°C 0,1 Tj=150°C Tj=25°C 650 Tj=150°C Tj=25°C 217 Tj=150°C 223 Tj=25°C 27 Tj=150°C 30 Tj=25°C 266 Tj=150°C 290 Tj=25°C 55 Tj=150°C 81 Tj=25°C 1,58 Tj=150°C 2,07 Tj=25°C 1,79 Tj=150°C 2,24 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 0,75 K/W Tj=25°C 1 1,54 2,6 Tj=150°C 1,6 Tj=25°C 63,45 Tj=150°C 74,57 Tj=25°C 58,2 Tj=150°C 262,4 Tj=25°C 3,74 Tj=150°C 6,47 di(rec)max Tj=25°C 3216 /dt Tj=150°C 2350 Tj=25°C 0,74 Tj=150°C 1,33 Thermal resistance chip to heatsink per chip RthJH Thermal grease thickness ≤50um λ = 1 W/mK 1,2 K/W 1000 Tj=25°C Tj=25°C 145 V mWs ns A nC nA mA ns V pF T=25°C T=100°C T=100°C T=25°C 300 Thermistor Rgoff=8 1500 R100=1670 R Rated resistance Power dissipation constant Deviation of R100 ∆R/R mW/K R100 P 300 0,0012 300 25 0 75 75 Collector-emitter saturation voltage Collector-emitter cut-off current incl. Diode Fall time Turn-off delay time Turn-on delay time Rise time Gate-emitter leakage current Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current IRRM trr Erec Turn-on energy loss per pulse Reverse recovered charge D1,D2,D3,D4,D5,D6,D7 VF Peak reverse recovery current Reverse transfer capacitance Diode forward voltage Gate charge Qrr 75 ±15 612 Rgon=8 ±25 15 Rgoff=8 0 µC mWs A/µs Reverse current Ir V V m mA 35 35 35 Characteristic Values Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) VF Vto rt D8,D9,D10,D11,D12,D13 Value Conditions Input capacitance Output capacitance Turn-off energy loss per pulse Integrated Gate resistor T1,T2,T3,T4,T5,T6,T7 Gate emitter threshold voltage Cies QGate Rgint tf Eon Eoff td(on) tr ICES Coss Crss td(off) VCE=VGE IGES VGE(th) VCE(sat) f=1MHz 0 ±15 1670,313 -3 % 3 75 V 470 4 4700 7,635*10-3 A-value B(25/50) Tol. % 1/K B(25/100) T=25°C 1,731*10-5 1/K² T=25°C B-value Tol. % Vincotech NTC Reference E 3 Revision: 3.1 Copyright by Vincotech |
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