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V23990-K427-A40-PM Datasheet(PDF) 3 Page - Vincotech |
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V23990-K427-A40-PM Datasheet(HTML) 3 Page - Vincotech |
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3 / 17 page  V23990-K427-A40-PM Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 0,8 1,34 1,35 Tj=125°C 1,27 Tj=25°C 0,85 Tj=125°C 0,75 Tj=25°C 14 Tj=125°C 15 Tj=25°C 0,1 Tj=125°C 1,1 Thermal resistance chip to heatsink per chip RthJH 0,90 Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1,6 1,87 2,1 Tj=150°C 2,30 Tj=25°C 0,005 Tj=150°C Tj=25°C 120 Tj=150°C Tj=25°C 78 Tj=150°C 79 Tj=25°C 24 Tj=150°C 29 Tj=25°C 196 Tj=150°C 268 Tj=25°C 77 Tj=150°C 131 Tj=25°C 2,54 Tj=150°C 3,84 Tj=25°C 1,92 Tj=150°C 3,18 Thermal resistance chip to heatsink per chip RthJH 0,85 Tj=25°C 2,37 2,62 Tj=150°C 2,35 2,62 Tj=25°C 16 Tj=150°C 23 Tj=25°C 336 Tj=150°C 550 Tj=25°C 2,20 Tj=150°C 5,36 di(rec)max Tj=25°C 63 /dt Tj=150°C 67 Tj=25°C 0,77 Tj=150°C 2,07 Thermal resistance chip to heatsink per chip RthJH 1,2 E Vincotech NTC Reference 1,731*10-5 1/K² 7,635*10-3 1/K B-value B(25/100) Tol. % T=25°C T=25°C A-value B(25/50) Tol. % Thermal grease thickness≤50µm λ=1W/mK Thermal grease thickness≤50µm λ=1W/mK K/W A ±15 V ns 35 - V V nC % -3 T=25°C 1670,313 3 VCE=VGE f=1MHz Rgoff=16 ±15 0 0 ±15 tr td(off) QGate Qrr trr Erec Reverse transfer capacitance IGES VGE(th) VCE(sat) ICES Coss Rgint tf Eon Cies Eoff IRRM td(on) Crss VF Input capacitance Output capacitance Turn-off energy loss per pulse Collector-emitter saturation voltage Turn-on energy loss per pulse Collector-emitter cut-off current incl. Diode Value Conditions Characteristic Values Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) VF Vto rt D8,D9,D10,D11,D12,D13 35 35 35 K/W V V m mA Reverse current Ir 115 A/µs Rgon=16 20 15 35 35 600 Diode forward voltage Gate charge Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current Reverse recovered charge D1,D2,D3,D4,D5,D6,D7 Peak reverse recovery current Fall time Turn-off delay time Turn-on delay time Rise time Gate-emitter leakage current Integrated Gate resistor T1,T2,T3,T4,T5,T6,T7 Gate emitter threshold voltage 35 0,0008 40 600 25 0 600 960 mW/K T=25°C T=100°C 1000 R100 P T=100°C Rated resistance R Power dissipation constant Deviation of R100 ∆R/R R100=1670 1500 Thermal grease thickness≤50µm λ=1W/mK Thermistor Rgoff=16 Tj=25°C Tj=25°C K/W µC mWs pF mWs 1950 155 203 mA ns nA copyright Vincotech 3 Revision: 1.1 |
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