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V23990-P829-F08-3-PM Datasheet(PDF) 10 Page - Vincotech |
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V23990-P829-F08-3-PM Datasheet(HTML) 10 Page - Vincotech |
10 / 16 page V23990-P829-F08x-PM datasheet Copyright Vincotech 10 27 Nov. 2015 / Revision 1 Figure 15. IGBT Reverse bias saf e operating area I C = f(V CE) At T j = 175 °C R gon = 8 Ω R goff = 8 Ω 0 20 40 60 80 100 120 0 200 400 600 800 1000 1200 1400 V V V V C E C E C E C E (V) (V) (V) (V) IIIIC MAX C MAX C MAX C MAX Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) At V CE = 600 V 25 °C At V CE = 600 V 25 °C V GE = ±15 V T j: 150 °C V GE = ±15 V T j: 150 °C R gon = 8 Ω I C= 50 A 0 3000 6000 9000 12000 15000 0 8 16 24 32 40 R R R Rgon g o n g o n g o n ( (((Ω) Ω) Ω) Ω) d iiiiFFFF////dtttt diiii rr r r r r r r/ // /d tttt 0 1000 2000 3000 4000 5000 6000 0 20 40 60 80 100 IIII CCCC (A) (A) (A) (A) d iiiiFFFF////dtttt d iiiirr r r r r r r / // /d tttt |
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