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AP50T10GJ-HF Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP50T10GJ-HF Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 5 page AP50T10GH/J-HF Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 0 2 4 6 8 10 12 0 1020 3040 50 Q G , Total Gate Charge (nC) V DS =50 V V DS =60 V V DS =80 V I D =24 A td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0 1000 2000 3000 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) . |
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