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AP72T03GH-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP72T03GH-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 5 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Low On-resistance RDS(ON) 9mΩ ▼ Fast Switching Characteristic ID 62A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ EAS Single Pulse Avalanche Energy 3 mJ IAR Avalanche Current A TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃ /W Rthj-a 62.5 ℃ /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃ /W Data and specifications subject to change without notice 60 -55 to 175 201412025 Thermal Data . 1 Operating Junction Temperature Range -55 to 175 Storage Temperature Range Linear Derating Factor 0.4 29 24 Total Power Dissipation 30 Gate-Source Voltage + 20 Drain Current, VGS @ 10V 62 Drain Current, VGS @ 10V 44 Pulsed Drain Current 1 190 AP72T03GH/J-HF Halogen-Free Product Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Parameter Rating Drain-Source Voltage G D S TO-252(H) G D S G D S TO-251(J) AP72T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP72T03GJ) are available for low-profile applications. . |
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