Electronic Components Datasheet Search |
|
TPS25810 Datasheet(PDF) 5 Page - Texas Instruments |
|
TPS25810 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 36 page TPS25810 www.ti.com SLVSCR1A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 6.4 Thermal Information TPS25810 THERMAL METRIC(1) RVC (WQFN) UNIT 20 PINS RθJA Junction-to-ambient thermal resistance 39.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 43.4 °C/W RθJB Junction-to-board thermal resistance 13 °C/W ψJT Junction-to-top characterization parameter 0.7 °C/W ψJB Junction-to-board characterization parameter 13 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 4.2 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.5 Electrical Characteristics –40°C ≤ TJ ≤ 125°C, 4.5 V ≤ VIN1 ≤ 6.5 V, 4.5 V ≤ VIN2 ≤ 5.5 V, 2.9 V ≤ VAUX ≤ 5.5 V; VEN = VCHG = VCHG_HI = VAUX, RREF = 100 k Ω. Typical values are at 25°C. All voltages are with respect to GND. IOUT and IOS defined positive out of the indicated pin (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OUT - POWER SWITCH TJ = 25°C, IOUT = 3 A 34 37 RDS(on) On resistance(1) –40°C ≤ TJ ≤ 85°C, IOUT = 3 A 34 46 m Ω –40°C ≤ TJ ≤ 125°C, IOUT = 3 A 34 55 VOUT = 6.5 V, VIN1 = VEN = 0 V, IREV OUT to IN reverse leakage current –40°C ≤ TJ ≤ 85°C, 0 3 µA IREV is current out of IN1 pin OUT - CURRENT LIMIT VCHG = 0 V or VCHG = VAUX and VCHG_HI = 0 1.58 1.7 1.82 V IOS Short circuit current limit (1) A VCHG = VAUX and VCHG_HI = VAUX 3.16 3.4 3.64 RREF = 10 Ω 7 OUT - DISCHARGE VOUT = 4 V, UFP signature removed from Discharge resistance 400 500 600 Ω CC lines, time < tw_DCHG VOUT = 4 V, No UFP signature on CC lines, Bleed discharge resistance 100 150 250 k Ω time > tw_DCHG REF VO Output voltage 0.78 0.8 0.82 V IOS Short circuit current RREF = 10 Ω 9.5 15.3 µA FAULT VOL Output low voltage IFAULT = 1 mA 350 mV IOFF Off-state leakage VFAULT = 5.5 V 1 µA LD_DET VOL Output low voltage ILD_DET = 1 mA 350 mV IOFF Off-state leakage VLD_DET = 5.5 V 1 µA OUT sourcing, rising threshold ITH 1.8 1.95 2.1 A current for load detect Hysteresis(2) 125 mA (1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. (2) These parameters are provided for reference only and do not constitute part of TI’s published specifications for purposes of TI’s product warranty. Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPS25810 |
Similar Part No. - TPS25810_15 |
|
Similar Description - TPS25810_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |