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S3979 Datasheet(PDF) 8 Page - List of Unclassifed Manufacturers |
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S3979 Datasheet(HTML) 8 Page - List of Unclassifed Manufacturers |
8 / 16 page 5 A PSD basically consists of a uniform resistive layer formed on one or both surfaces of a high-resistivity semi- conductor substrate, and a pair of electrodes formed on both ends of the resistive layer for extracting position signals. The active area, which is also a resistive layer, has a PN junction that generates photocurrent by means of the photovoltaic effect. KPSDC0010EA KPSDC0006EA By finding the difference or ratio of Ix1 to Ix2, the light input position can be obtained by the formulas (1-3), (1-4), (1-7) and (1-8) irrespective of the incident light intensity level and its changes. The light input position obtained here cor- responds to the center-of-gravity of the light beam. Figure 1-1 shows a sectional view of a PSD using a simple illustration to explain the operating principle. The PSD has a P-type resistive layer formed on an N-type high-resistive silicon substrate. This P-layer serves as an active area for photoelectric conversion and a pair of output electrodes are formed on the both ends of the P-layer. On the backside of the silicon substrate is an N-layer to which a common electrode is connected. Basically, this is the same structure as that of PIN photodiodes except for the P-type resistive layer on the surface. When a spot light strikes the PSD, an electric charge proportional to the light intensity is generated at the incident position. This electric charge is driven through the resistive layer and collected by the output electrodes X1 and X2 as photocurrents, while being divided in inverse proportion to the distance between the incident position and each electrode. The relation between the incident light position and the photocurrents from the output electrodes X1, X2 is given by the following formulas. l When the center point of PSD is set at the origin: l When the end of PSD is set at the origin: Io : Total photocurrent (IX1 + IX2) IX1: Output current from electrode X1 IX2: Output current from electrode X2 LX: Resistance length (length of the active area) XA: Distance from the electrical center of PSD to the light input position XB: Distance from the electrode X1 to the light input position In the above formula, IX1 and IX2 are the output currents obtained from the electrodes shown in Figure 2-2. l Position conversion formula (See Figure 2-2.) Two-dimensional PSDs are grouped by structure into duo- lateral and tetra-lateral types. Among the tetra-lateral type PSDs, a pin-cushion type with an improved active area and electrodes is also provided. (See “3-3”.) The position conversion formulas slightly differ according to the PSD structure. Two-dimensional PSDs have two pairs of output electrodes, X1, X2 and Y1, Y2. 3-1 Duo-lateral type PSD On the duo-lateral type, the N-layer shown in the sectional view of Figure 1-1 is processed to form a resistive layer, and two pair of electrodes are formed on both surfaces as X and Y electrodes arranged at right angles. (See Figure 3-1.) The X position signals are extracted from the X elec- trodes on the upper surface, while the Y position signals are extracted from the Y electrodes on the bottom surface. As shown in Figure 3-1, a photocurrent with a polarity op- posite that of the other surface is on each surface, to pro- duce signal currents twice as large as the tetra-lateral type and achieve a higher position resolution. In addition, when compared to the tetra-lateral type, the duo-lateral type of- fers excellent position detection characteristics because the electrodes are not in close proximity. The light input position can be calculated from conversion formulas (3-1) and (3-2). Figure 2-1 Structure chart, equivalent circuit (one-dimensional PSD) Figure 2-2 Active area chart (one-dimensional PSD) KPSDC0005EA Figure 1-1 PSD sectional view IX2 = = ............ (1-3) IX2 - IX1 IX1 + IX2 2XA LX = .............. (1-4) IX1 IX2 LX - 2XA LX + 2XA = ...... (1-7) IX2 - IX1 IX1 + IX2 2XB - LX LX = ........ (2-1) IX2 - IX1 IX1 + IX2 2x LX = ................ (1-8) IX1 IX2 LX - XB XB IX1 = . Io ............. (1-5) LX - XB LX IX2 = . Io ................. (1-6) XB LX Characteristic and use 1. Basic principle 2. One-dimensional PSD 3. Two-dimensional PSD IX1 = LX 2 LX ......... (1-1) × Io - XA LX 2 LX ...... (1-2) × Io + XA OUTPUT IX1 PHOTOCURRENT XB INCIDENT LIGHT P LAYER RESISTANCE LENGTH LX COMMON ELECTRODE XA OUTPUT IX2 ELECTRODE X1 ELECTRODE X2 I LAYER N LAYER LX X1 X2 ACTIVE AREA x P D Cj Rsh Rp : CURRENT GENERATOR : IDEAL DIODE : JUNCTION CAPACITANCE : SHUNT RESISTANCE : POSITIONING RESISTANCE PD Cj Rsh Rp CATHODE (COMMON) ANODE (X2) ANODE (X1) |
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