IDT71V802S150BQ datasheet(4/22 Pages) IDT

Part #	IDT71V802S150BQ

Description	256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

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Manufacturer	IDT [Integrated Device Technology]

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IDT71V67602, IDT71V67802, 256K x 36, 512K x 18, 3.3V Synchronous

Commercial and Industrial Temperature Ranges

SRAMs with 2.5V I/O, Pipelined Outputs, Single Cycle Deselect

100-pin TQFP Capacitance

(TA = +25°C, f = 1.0MHz)

Recommended Operating

Temperature and Supply Voltage

Absolute Maximum Ratings(1)

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. VDD terminals only.

3. VDDQ terminals only.

4. Input terminals only.

5. I/O terminals only.

6. This is a steady-state DC parameter that applies after the power supplies have

ramped up. Power supply sequencing is not necessary; however, the voltage

on any input or I/O pin cannot exceed VDDQ during power supply ramp up.

7. TA is the "instant on" case temperature.

NOTE:

1. This parameter is guaranteed by device characterization, but not production tested.

Symbol

Rating

Commercial

Unit

VTERM

(2)

Te rminal Vo ltag e with

Re sp e ct to GND

-0.5 to +4.6

V

VTERM

(3,6)

Te rminal Vo ltag e with

Re sp e ct to GND

-0.5 to VDD

V

VTERM

(4,6)

Te rminal Vo ltag e with

Re sp e ct to GND

-0.5 to VDD +0.5

V

VTERM

(5,6)

Te rminal Vo ltag e with

Re sp e ct to GND

-0.5 to VDDQ +0.5

V

TA(7)

Co mmercial

-0 to +70

o C

Ind ustrial

-40 to +85

o C

TBIAS

Te mp e rature

Und e r Bias

-55 to +125

o C

TSTG

Sto rag e

Te mp e rature

-55 to +125

o C

PT

Po we r Dissipation

2.0

W

IOUT

DC Outp ut Curre nt

50

mA

5311 tbl 03

Grade

Temperature(1)

VSS

VDD

VDDQ

Commercial

0°C to +70°C

0V

3.3V±5%

2.5V±5%

Industrial

-40°C to +85°C

0V

3.3V±5%

2.5V±5%

5311 tbl 04

Symbol

Parameter

(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

5

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5311 tbl 07

Symbol

Parameter

Min.

Typ.

Max.

Unit

VDD

Core Supply Voltage

3.135

3.3

3.465

V

VDDQ

I/O Supply Voltage

2.375

2.5

2.625

V

VSS

Ground

0

V

VIH

Input High Voltage - Inputs

1.7

____

VDD+0.3

V

VIH

Input High Voltage - I/O

1.7

____

VDDQ+0.3

V

VIL

Input Low Voltage

-0.3

(1)

____

0.7

V

5311 tbl 06

Recommended DC Operating

Conditions

NOTE:

1. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.

NOTE:

1. TA is the "instant on" case temperature.

119 BGA Capacitance

(TA = +25°C, f = 1.0MHz)

Symbol

Parameter

(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

7

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5311 tbl 07a

165 fBGA Capacitance

(TA = +25°C, f = 1.0MHz)

Symbol

Parameter

(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

7

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5311 tbl 07b

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