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AP4608P Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP4608P Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 6 page AP4608P Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 4 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0 2000 4000 6000 8000 10000 1 1121 3141 51 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 2 4 6 8 10 12 0 40 80 120 160 200 Q G , Total Gate Charge (nC) I D =40 A V DS =32V 1 10 100 1000 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 10us 100us 1ms 10ms 100ms DC Operation in this area limited by RDS(ON) 0 100 200 300 400 25 75 125 175 T C , Case Temperature ( o C ) Limited by package 0 100 200 300 02468 10 V GS , Gate-to-Source Voltage (V) T j =175 o C T j =25 o C V DS =5V T j = -55 o C |
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