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PE42543A-X Datasheet(PDF) 4 Page - Peregrine Semiconductor |
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PE42543A-X Datasheet(HTML) 4 Page - Peregrine Semiconductor |
4 / 14 page Product Specification PE42543 Page 4 of 14 Document No. DOC-12314-2 │ UltraCMOS® RFIC Solutions ©2013-2014 Peregrine Semiconductor Corp. All rights reserved. Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified. Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Switching Frequency The PE42543 has a maximum 25 kHz switching rate when the internal negative voltage generator is used (pin 29 = GND). Switching frequency describes the time duration between switching events. Switching time is the duration between the point the control signal reaches 50% of the final value and the point the output signal reaches within 10% or 90% of its target value. Table 5. Truth Table State V1 V2 RF1 on 0 0 RF2 on 1 0 RF3 on 0 1 RF4 on 1 1 Moisture Sensitivity Level The Moisture Sensitivity Level rating for the PE42543 in the 29-lead 4 4 mm LGA package is MSL3. Optional External VSS Control (VSS_EXT) For proper operation, the VSS_EXT control pin must be grounded or tied to the VSS voltage specified in Table 3. When the VSS_EXT control pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applications that require the lowest possible spur performance, VSS_EXT can be applied externally to bypass the internal negative voltage generator. Table 4. Absolute Maximum Ratings Parameter/Condition Symbol Min Max Unit Supply voltage VDD –0.3 5.5 V Digital input voltage (V1, V2) VCTRL –0.3 3.6 V RF input power, CW (RFC–RFX) 1 9 kHz–27.5 MHz ≥27.5 MHz–18 GHz PMAX,ABS Fig. 4 33 dBm dBm Storage temperature range TST –65 +150 °C ESD voltage HBM, 3 all pins VESD,HBM 2500 V ESD voltage MM 4, all pins VESD,MM 150 V ESD voltage CDM 5, all pins VESD,CDM 250 V RF input power, pulsed (RFC–RFX) 2 9 kHz–27.5 MHz ≥27.5 MHz–18 GHz PMAX,PULSED Fig. 4 34 dBm dBm RF input power into terminated ports, CW (RFX) 1 9 kHz–18.8 MHz ≥18.8 MHz–18 GHz PMAX,TERM Fig. 4 22 dBm dBm Notes: 1. 100% duty cycle, all bands, 50 Ω 2. Pulsed, 5% duty cycle of 4620 µs period, 50 Ω 3. Human Body Model (MIL_STD 883 Method 3015) 4. Machine Model (JEDEC JESD22-A115) 5. Charged Device Model (JEDEC JESD22-C101) Spurious Performance The typical spurious performance of the PE42543 is –150 dBm when VSS_EXT = 0V (pin 29 = GND). If further improvement is desired, the internal negative voltage generator can be disabled by setting VSS_EXT = –3.4V. Hot-Switching Capability The maximum hot switching capability of the PE42543 is 20 dBm from 18.8 MHz to 18 GHz. The maximum hot switching capability below 18.8 MHz does not exceed the maximum RF CW terminated power, see Figure 4. Hot switching occurs when RF power is applied while switching between RF ports. |
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