Page 3 of 15

Document No. DOC-50371-6 │ www.e2v-us.com

©2012–2015 Peregrine Semiconductor Corp. All rights reserved.

Product Specification

PE99153 DIE

PGOOD

PGOOD Threshold

EAINM_UP_THRESH entering PGOOD

window (% of Vref)

104

110.5

117.5

%

EAINM_LO_THRESH exiting PGOOD window

(% of Vref)

84

90

96

%

EAINM_UP (% of Vref)

2

%

EAINM_LO

1.7

%

PGOOD low sink current, PGOOD I_OL

V_PGOOD = 0.4V

4

8

mA

PGOOD high leakage current, PGOOD I_OH

10

20

µA

PGOOD Deglitch Time

64

SYNCOb

cycles

Error Amp

EAINM leakage

Measured at 1V input

0.2

µA

EAINP leakage

Measured at 1V input

0.2

µA

EAOUT Source Current

Measured at 1V input

–445

–350

–270

µA

EAOUT Sink Current

Measured at 1V input

125

220

270

µA

Error Amplifier Transconductance

EAOUT = 1.5V DC

0.7

1.4

2.1

mS

Error Amplifier Output Resistance

4

6.4

10

MΩ

EA Input offset

1 MHz internal

–6

3.1

6

mV

Undervoltage Lockout

Underv-oltage Lockout

3.5

4.2

4.59

V

3.4

3.8

4.1

V

Underv-oltage Lockout Hysteresis

400

mV

Soft Start

SScap pin pull-up Resistance

V_SScap = 0V

1.2

MΩ

Internal SSCAP

16

pF

Vref Track, V_SScap – Vref_ext

V_SScap = 0.5V

–170

0

170

mV

DC Characteristics

SDb turn-on threshold

2

V

1.3

V

SYNCOb low sink current, SYNCOb I_OL

V_SYNCOb = 0.4

4

8

mA

SYNCOb high leakage current, SYNCOb I_OH

9.6

20

µA

SYNC

2.2

V

1.25

V

HSS Leakage

–1.6

–0.01

mA

LSS Leakage

0.3

1.8

mA

PGOOD Hysteresis

Parameter

Condition

Min

Typ

Max

Unit

Table 2. Electrical Specifications* (Continued)

Note: * Wafer level screening is performed at 25°C and 85°C only. However, performance is guaranteed over the full operating temperature range based on a

population of parts that were packaged and characterized at –55 °C and +125 °C.