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GKI10194 Datasheet(PDF) 2 Page - Sanken electric |
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GKI10194 Datasheet(HTML) 2 Page - Sanken electric |
2 / 8 page GKI10194 GKI10194-DS Rev.1.6 SANKEN ELECTRIC CO.,LTD. 2 Mar. 30, 2015 Thermal Characteristics Unless otherwise specified, T A = 25 °C Parameter Symbol Test Conditions Min. Typ. Max. Unit Thermal Resistance (Junction to Case) RθJC − − 1.6 °C/W Thermal Resistance (Junction to Ambient) RθJA Mounted on PCB* − − 40.3 °C/W * 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB. Electrical Characteristics Unless otherwise specified, T A = 25 °C Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain to Source Breakdown Voltage V(BR)DSS ID = 100 μA, VGS = 0 V 100 − − V Drain to Source Leakage Current IDSS VDS = 100 V, VGS = 0 V − − 100 µA Gate to Source Leakage Current IGSS VGS = ± 20 V − − ± 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 1.0 2.0 2.5 V Static Drain to Source On-Resistance RDS(ON) ID = 20.4 A, VGS = 10 V − 12.9 18.1 mΩ ID = 10.2 A, VGS = 4.5 V − 13.8 19.0 mΩ Gate Resistance RG f = 1 MHz − 1.1 − Ω Input Capacitance Ciss VDS = 25 V VGS = 0 V f = 1 MHz − 3990 − pF Output Capacitance Coss − 300 − Reverse Transfer Capacitance Crss − 160 − Total Gate Charge (VGS = 10 V) Qg1 VDS = 50 V ID = 23.4 A − 57.7 − nC Total Gate Charge (VGS = 4.5 V) Qg2 − 27.1 − Gate to Source Charge Qgs − 10.1 − Gate to Drain Charge Qgd − 7.5 − Turn-On Delay Time td(on) VDD = 50 V ID = 23.4 A VGS = 10 V, RG = 4.7 Ω Refer to Figure 2 − 7.0 − ns Rise Time tr − 6.5 − Turn-Off Delay Time td(off) − 34.2 − Fall Time tf − 13.9 − Source to Drain Diode Forward Voltage VSD IS = 20.4 A, VGS = 0 V − 0.9 1.5 V Source to Drain Diode Reverse Recovery Time trr IF = 23.4 A di/dt = 100 A/µs Refer to Figure 3 − 49.2 − ns Source to Drain Diode Reverse Recovery Charge Q rr − 92.7 − nC |
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Similar Description - GKI10194_15 |
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