6

bq2970, bq2971, bq2972, bq2973

SLUSBU9C – MARCH 2014 – REVISED MARCH 2016

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Thermal Information (continued)

bq297xx

UNIT

DSE (WSON)

12 PINS

(5)

The junction-to-top characterization parameter,

(6)

The junction-to-board characterization parameter,

(7)

The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific

JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

Spacer

6.4

°C/W

152.8

°C/W

N/A

°C/W

7.5 DC Characteristics

to 4.2 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

CURRENT CONSUMPTION

Device operating range

BAT – VSS

1.5

8

V

BAT – V–

1.5

28

Current consumption in NORMAL mode

BAT = 3.8 V, V– = 0 V

4

5.5

µA

Current consumption in power down mode

BAT = V– = 1.5 V

0.1

µA

FET OUTPUT, DOUT and COUT

Charge FET low output

0.4

0.5

V

Charge FET high output

3.4

3.7

V

Discharge FET low output

0.2

0.5

V

Discharge FET high output

3.4

3.7

V

PULL UP INTERNAL RESISTANCE ON V–

Resistance between V– and VBAT

100

300

550

k

Ω

CURRENT SINK ON V–

Current sink on V– to VSS

8

24

µA

LOAD SHORT DETECTION ON V–

Short detection voltage

V

0-V BATTERY CHARGE FUNCTION

0-V battery charging starter voltage

0-V battery charging function allowed

1.7

V

0-V battery charging inhibit voltage

0-V battery charging function disallowed

0.75

V

7.6 Programmable Fault Detection Thresholds

PARAMETER

CONDITION

MIN

TYP

MAX

UNIT

Overcharge detection voltage

Factory Device Configuration: 3.85 V to

4.60 V in 50-mV steps

–10

10

mV

60°C

–20

20

mV

Overcharge release hysteresis

voltage

25°C

–20

20

mV

Over-discharge detection

voltage

Factory Device Configuration: 2.00 V to 2.80 V in 50-mV

–50

50

mV

Over-discharge release

hysteresis voltage

–50

50

mV

Discharging overcurrent

detection voltage

Factory Device Configuration: 90 mV to

200 mV in 5-mV steps

–10

10

mV

85°C

–15

15

mV