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BQ29733DSET Datasheet(PDF) 6 Page - Texas Instruments |
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BQ29733DSET Datasheet(HTML) 6 Page - Texas Instruments |
6 / 31 page 6 bq2970, bq2971, bq2972, bq2973 SLUSBU9C – MARCH 2014 – REVISED MARCH 2016 www.ti.com Product Folder Links: bq2970 bq2971 bq2972 bq2973 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Thermal Information (continued) THERMAL METRIC(1) bq297xx UNIT DSE (WSON) 12 PINS (5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7). (6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7). (7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Spacer ψJT Junction-to-top characterization parameter(5) 6.4 °C/W ψJB Junction-to-board characterization parameter(6) 152.8 °C/W RθJC(bottom) Junction-to-case(bottom) thermal resistance(7) N/A °C/W 7.5 DC Characteristics Typical Values stated where TA = 25°C and BAT = 3.6 V. Min/Max values stated where TA = –40°C to 85°C, and BAT = 3 V to 4.2 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CURRENT CONSUMPTION VBAT Device operating range BAT – VSS 1.5 8 V BAT – V– 1.5 28 INORMAL Current consumption in NORMAL mode BAT = 3.8 V, V– = 0 V 4 5.5 µA IPower_down Current consumption in power down mode BAT = V– = 1.5 V 0.1 µA FET OUTPUT, DOUT and COUT VOL Charge FET low output IOL = 30 µA, BAT = 3.8 V 0.4 0.5 V VOH Charge FET high output IOH = –30 µA, BAT = 3.8 V 3.4 3.7 V VOL Discharge FET low output IOL = 30 µA, BAT = 2 V 0.2 0.5 V VOH Discharge FET high output IOH = –30 µA, BAT = 3.8 V 3.4 3.7 V PULL UP INTERNAL RESISTANCE ON V– RV–D Resistance between V– and VBAT VBAT = 1.8 V, V– = 0 V 100 300 550 k Ω CURRENT SINK ON V– IV–S Current sink on V– to VSS VBAT = 3.8 V 8 24 µA LOAD SHORT DETECTION ON V– Vshort Short detection voltage VBAT = 3.8 V and RPackN = 2.2 kΩ VBAT – 1 V V 0-V BATTERY CHARGE FUNCTION V0CHG 0-V battery charging starter voltage 0-V battery charging function allowed 1.7 V V0INH 0-V battery charging inhibit voltage 0-V battery charging function disallowed 0.75 V 7.6 Programmable Fault Detection Thresholds PARAMETER CONDITION MIN TYP MAX UNIT VOVP Overcharge detection voltage Factory Device Configuration: 3.85 V to 4.60 V in 50-mV steps TA = 25°C –10 10 mV TA = 0°C to 60°C –20 20 mV VOVP–Hys Overcharge release hysteresis voltage 100 mV and (VSS – V–) > OCC (min) for release, TA = 25°C –20 20 mV VUVP Over-discharge detection voltage Factory Device Configuration: 2.00 V to 2.80 V in 50-mV steps, TA = 25°C –50 50 mV VUVP+Hys Over-discharge release hysteresis voltage 100 mV and (BAT – V–) > 1 V for release, TA = 25°C –50 50 mV VOCD Discharging overcurrent detection voltage Factory Device Configuration: 90 mV to 200 mV in 5-mV steps TA = 25°C –10 10 mV TA = –40°C to 85°C –15 15 mV |
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