Linear Integrated Systems

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Doc 201117 05/09/14 Rev#A6 ECN# U/J/SST 308

FEATURES

Direct Replacement For SILICONIX U/J/SST308 SERIES

OUTSTANDING HIGH FREQUENCY GAIN

LOW HIGH FREQUENCY NOISE

NF = 2.7dB

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-55 to 150°C

Junction Operating Temperature

-55 to 150°C

Maximum Power Dissipation

350mW

500mW

Maximum Currents

Gate Current (J/SST)

10mA

Gate Current (U)

20mA

Maximum Voltages

Gate to Drain

-25V

Gate to Source

-25V

COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNIT

CONDITIONS

Gate to Source Breakdown Voltage

-25

V

Gate to Source Forward Voltage

0.7

1.15

Gate Operating Current

-15

pA

Drain to Source On Resistance

35

Ω

Equivalent Noise Voltage

6

nV/√Hz

NF

Noise Figure

f = 105MHz

1.5

dB

f = 450MHz

2.7

f = 105MHz

16

f = 450MHz

11.5

Forward

Transconductance

f = 105MHz

14

mS

f = 450MHz

13

Output Conductance

f = 105MHz

0.16

f = 450MHz

0.55

IGSS

Gate Reverse Current

-1

nA

U/J/SST308 SERIES

SINGLE N-CHANNEL

HIGH FREQUENCY

JFET AMPLIFIER

J SERIES

TO-92

TOP VIEW

SST SERIES

SOT-23

TOP VIEW

U SERIES

TO-18

TOP VIEW

TOP VIEW

1

2

3

SOT-23

TOP VIEW

D

G

S