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LM5107MAX Datasheet(PDF) 3 Page - Texas Instruments |
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LM5107MAX Datasheet(HTML) 3 Page - Texas Instruments |
3 / 20 page HI LI V SS HO HS LO HB V DD 1 2 3 4 8 7 6 5 3 LM5107 www.ti.com SNVS333E – NOVEMBER 2004 – REVISED MARCH 2016 Product Folder Links: LM5107 Submit Documentation Feedback Copyright © 2004–2016, Texas Instruments Incorporated (1) For WSON package it is recommended that the exposed pad on the bottom of the LM5107 be soldered to ground plane on the PCB board and the ground plane should extend out from underneath the package to improve heat dissipation. 5 Pin Configuration and Functions D and NGT Packages 8-Pin SOIC, WSON Top View Pin Functions(1) Pin # Name Description Application Information SOIC WSON 1 1 VDD Positive gate drive supply Locally decouple to VSS using low ESR/ESL capacitor located as close to IC as possible. 2 2 HI High side control input The LM5107 HI input is compatible with TTL input thresholds. Unused HI input should be tied to ground and not left open 3 3 LI Low side control input The LM5107 LI input is compatible with TTL input thresholds. Unused LI input should be tied to ground and not left open. 4 4 VSS Ground reference All signals are referenced to this ground. 5 5 LO Low side gate driver output Connect to the gate of the low side N-MOS device. 6 6 HS High side source connection Connect to the negative terminal of the bootstrap capacitor and to the source of the high side N-MOS device. 7 7 HO High side gate driver output Connect to the gate of the low side N-MOS device. 8 8 HB High side gate driver positive supply rail Connect the positive terminal of the bootstrap capacitor to HB and the negative terminal of the bootstrap capacitor to HS. The bootstrap capacitor should be placed as close to IC as possible. (1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test conditions, see the Electrical Characteristics . (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. (3) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD - 15V. For example, if VDD = 10V, the negative transients at HS must not exceed -5V. 6 Specifications 6.1 Absolute Maximum Ratings See (1) (2) VDD to VSS -0.3V to 18V HB to HS −0.3V to 18V LI or HI to VSS −0.3V to VDD +0.3V LO to VSS −0.3V to VDD +0.3V HO to VSS VHS −0.3V to VHB +0.3V HS to VSS (3) −5V to 100V HB to VSS 118V Junction Temperature -40°C to +150°C Storage Temperature Range −55°C to +150°C |
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