Monolithic InGaP HBT MMIC Amplifier

Notes

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.

B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.

C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled

to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Page 2 of 4

Parameter

Min.

Typ.

Max.

Units

Frequency Range*

DC

8

GHz

Gain

f=0.1 GHz

—

12.7

—

dB

f=1 GHz

—

12.5

—

f=2 GHz

9.0

11.8

—

f=3 GHz

—

11.3

—

f=4 GHz

—

10.5

—

f=6 GHz

—

10.5

—

f=8 GHz

—

11.0

—

Input Return Loss

f= DC to 3 GHz

17.5

dB

f= 3 to 8 GHz

11.5

Output Return Loss

f= DC to 3 GHz

15.5

dB

f= 3 to 8 GHz

11

Output Power @ 1 dB compression

f=2 GHz

10.5

12.2

—

dBm

Output IP3

f=2 GHz

27

dBm

Noise Figure

f=2 GHz

4.5

dB

Recommended Device Operating Current

40

mA

Device Operating Voltage

3.0

3.4

4.1

V

Device Voltage Variation vs. Temperature at 40 mA

-2.8

mV/°C

Device Voltage Variation vs. Current at 25°C

9.4

mV/mA

108

°C/W

Gali 1+

Electrical Specifications at 25°C and 40mA, unless noted

Parameter

Ratings

Operating Temperature*

-45°C to 85°C

Storage Temperature

-65°C to 150°C

Operating Current

55mA

Input Power

15dBm

Note: Permanent damage may occur if any of these limits are exceeded.

These ratings are not intended for continuous normal operation.

1

Case is defined as ground leads.

*Based on typical case temperature rise 2°C above ambient.

Absolute Maximum Ratings