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LP8556SQX-E08 Datasheet(PDF) 7 Page - Texas Instruments |
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LP8556SQX-E08 Datasheet(HTML) 7 Page - Texas Instruments |
7 / 63 page 7 LP8556 www.ti.com SNVS871I – JULY 2012 – REVISED MARCH 2016 Product Folder Links: LP8556 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated (1) All voltages are with respect to the potential at the GND pins. (2) Minimum (MIN) and Maximum (MAX) limits are verified by design, test, or statistical analysis. Typical numbers are for information only. (3) Verified by design and not tested in production. 7.5 Electrical Characteristics Unless otherwise specified: VDD = 12 V, EN / VDDIO = 1.8 V, TA = 25°C (1) (2) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VDDIO Supply voltage for digital I/Os 1.62 3.6 V VDD Input voltage for the internal LDO 2.7 20 V IDD Standby supply current EN / VDDIO = 0 V, LDO disabled, –30°C ≤ TA ≤ 85°C 1.6 μA Normal mode supply current LDO enabled, boost disabled 0.9 1.5 mA LDO enabled, boost enabled, no load 2.2 3.65 fOSC Internal oscillator frequency accuracy –4% 4% –30°C ≤ TA ≤ 85°C –7% 7% VLDO LDO output voltage VDD ≥ 3.1 V 2.95 3.05 3.15 V 2.7 V ≤ VDD < 3.1 V VDD – 0.05 TTSD Thermal shutdown threshold See(3) 150 °C TTSD_hyst Thermal shutdown hysteresis 20 °C |
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