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AP9563GK-HF Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9563GK-HF Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 5 page Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -40V ▼ Lower Gate Charge RDS(ON) 40mΩ ▼ Fast Switching Characteristic ID -6.8A Description Absolute Maximum Ratings@Tj=25 oC(unless otherwise specified) Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 45 ℃ /W Data and specifications subject to change without notice Halogen-Free Product Thermal Data Storage Temperature Range Drain Current, VGS @ 10V 3 -5.4 Pulsed Drain Current 1 -30 Parameter Total Power Dissipation Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V 3 201412195AP Parameter 2.8 -55 to 150 Operating Junction Temperature Range -55 to 150 1 AP9563GK-HF Rating -40 +20 -6.8 G D S D D S G SOT-223 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost- effectiveness. . |
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