E-PHEMT

SAV-551+

Notes

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.

B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.

C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled

to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Page 2 of 13

Symbol

Parameter

Condition

Min.

Typ.

Max.

Units

DC Specifications

V

GS

Operational Gate Voltage

V

0.22

0.34

0.46

V

V

TH

Threshold Voltage

V

0.18

0.26

0.38

V

I

DSS

Saturated Drain Current

V

1.0

5.0

µA

G

M

Transconductance

V

∆V

V

V

—

—

215

—

—

—

—

251

—

—

—

—

285

—

—

mS

I

GSS

Gate leakage Current

V

95

µA

RF Specifications, Z

Noise Figure

V

f=0.9 GHz

0.5

—

dB

f=2.0 GHz

0.6

0.9

f=3.9 GHz

1.0

—

f=5.8 GHz

1.8

—

V

f=2.0 GHz

0.6

—

Gain

Gain

V

f=0.9 GHz

—

20.9

dB

f=2.0 GHz

14.4

15.9

17.5

f=3.9 GHz

—

11.2

—

f=5.8 GHz

—

7.6

—

V

f=2.0 GHz

—

16.0

—

OIP3

Output IP3

V

f=0.9 GHz

—

22.4

dBm

f=2.0 GHz

20.0

24.3

f=3.9 GHz

—

26.9

f=5.8 GHz

—

28.5

V

f=2.0 GHz

—

24.4

Power output at 1 dB

Compression

V

f=0.9 GHz

—

17.2

dBm

f=2.0 GHz

16.0

17.5

f=3.9 GHz

—

18.5

f=5.8 GHz

—

17.5

V

f=2.0 GHz

—

20.0

Notes:

(1) Includes test board loss (tested on Mini-Circuits TB-471+ test board)

(2) Drain current was allowed to increase during compression measurements.

(3) Operation of this device above any one of these parameters may cause permanent damage.

(4) Assumes DC quiescent conditions.

(5) I

Symbol

Parameter

Max.

Units

Drain-Source Voltage

5

V

Gate-Source Voltage

-5 to 0.7

V

Gate-Drain Voltage

-5 to 0.7

V

Drain Current

100

mA

Gate Current

2

mA

Total Dissipated Power

360

mW

RF Input Power

17

dBm

Channel Temperature

150

°C

Operating Temperature

-40 to 85

°C

Storage Temperature

-65 to 150

°C

Thermal Resistance

160

°C/W

Electrical Specifications at T