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TPS82130

SLVSCY5A – FEBRUARY 2016 – REVISED FEBRUARY 2016

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Copyright © 2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to network ground pin.

7 Specifications

7.1 Absolute Maximum Ratings

(1)

MIN

MAX

UNIT

VIN

-0.3

20

V

EN, SS/TR

-0.3

PG, FB

-0.3

7

VOUT

0

7

Sink current

PG

10

mA

Module operating temperature

–40

125

°C

Storage temperature

–40

125

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±2000

V

Charged device model (CDM), per JEDEC specification JESD22-

±1000

(1)

The module operating temperature range includes module self temperature rise and IC junction temperature rise. In applications where

high power dissipation is present, the maximum operating temperature or maximum output current must be derated. For applications

where the module operates continuously at 125 °C temperature, the maximum lifetime is reduced to 50,000 hours.

7.3 Recommend Operating Conditions

Over operating free-air temperature range, unless otherwise noted.

MIN

MAX

UNIT

Input voltage

3

17

V

Power good pull-up resistor voltage

6

V

Output voltage

0.9

5

V

Output current

0

3

A

-40

110

°C

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953

7.4 Thermal Information

SIL0008C

UNIT

8-Pin µSiL

Junction-to-ambient thermal resistance

71.7

°C/W

Junction-to-case (top) thermal resistance

n/a

°C/W

Junction-to-board thermal resistance

n/a

°C/W

Junction-to-top characterization parameter

1.3

°C/W

Junction-to-board characterization parameter

25.9

°C/W

Junction-to-case (bottom) thermal resistance

n/a

°C/W