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LM5023MMX-2 Datasheet(PDF) 4 Page - Texas Instruments |
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LM5023MMX-2 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 38 page LM5023 SNVS961E – APRIL 2013 – REVISED JANUARY 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT IQR Negative injection current when the QR pin is being driven below ground 4 mA VSD Maximum voltage –0.3 45 V IVSD VSD clamp continuous current 500 µA SS, COMP, QR –0.3 7 V VIN Voltage range CS –0.3 1.25 V OUT Gate-drive voltage at DRV –0.3 Self-limiting V IOUT Peak OUT current, source 0.3 A IOUT Peak OUT current sink 0.7 A VCC Bias supply voltage –0.3 16 V TJ Operating junction temperature –40 125 ºC Tstg Storage temperature –55 150 °C (1) Stresses beyond those listed under may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed. 6.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V V(ESD) Electrostatic discharge Charged-device model (CDM), per JEDEC specification JESD22- ±1000 V C101(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions MIN MAX UNIT VCC Bias supply voltage 8 14 V IVSD VSD Current 2 100 µA IQR QR pin current 1 4 mA TJ Junction temperature –40 125 ºC 4 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: LM5023 |
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Similar Description - LM5023MMX-2 |
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