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LMG5200MOFT Datasheet(PDF) 8 Page - Texas Instruments |
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LMG5200MOFT Datasheet(HTML) 8 Page - Texas Instruments |
8 / 23 page SW PGND 8 9 VIN 1 HI LI 4 5 HS 3 HB 2 VCC 6 AGND 7 LMG5200 Pattern Generator VOUT Delay Measurement (A) LMG5200 SNOSCY4B – MARCH 2015 – REVISED JANUARY 2016 www.ti.com 7 Parameter Measurement Information 7.1 Propagation Delay and Mismatch Measurement Figure 5 shows the typical test setup used to measure the propagation mismatch. As the gate drives are not accessible, pull-up and pull-down resistors in this test circuit are used to indicate when the low-side GaN FET turns ON and the high-side GaN FET turns OFF and vice versa to measure the tMON and tMOFF parameters. Resistance values used in this circuit for the pull-up and pull-down resistors are in the order of 1 k Ω, the current sources used are 2 A. Figure 6 through Figure 8 show propagation delay measurement waveforms. For turn-on propagation delay measurements, the current sources are not used. For turn-off time measurements, the current sources are set to 2 A and a voltage clamp limit is also set, referred to as VIN(CLAMP). When measuring the high-side component turn-off delay, the current source across the high-side FET is turned on, the current source across the low-side FET is off, HI transitions from high-to-low and output voltage transitions from VIN to VIN(CLAMP). Similarly for low- side component turn-off propagation delay measurements, the high-side component current source is turned off and the low-side component current source is turned on, LI transitions from high to low and the output transitions from GND potential to VIN(CLAMP). The time between the transition of LI and the output change is the propagation delay time. Figure 5. Propagation Delay and Propagation Mismatch Measurement 8 Submit Documentation Feedback Copyright © 2015–2016, Texas Instruments Incorporated Product Folder Links: LMG5200 |
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