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UCC27424DGNR Datasheet(PDF) 5 Page - Texas Instruments |
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UCC27424DGNR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 34 page UCC27423, UCC27424, UCC27425 www.ti.com SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015 7.5 Electrical Characteristics VDD = 4.5 V to 15 V, TA = –40°C to 125°C,TA = TJ, (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT (INA, INB) VIN_H Logic 1 input threshold 2 V VIN_L Logic 0 input threshold 1 Input current 0 V ≤ VIN ≤ VDD –10 0 10 μA OUTPUT (OUTA, OUTB) Output current VDD = 14 V (1) 4 A VOH High-level output voltage VOH = VDD – VOUT, IOUT = –10 mA 330 450 mV VOL Low-level output level IOUT = 10 mA 22 45 TA = 25°C, IOUT = –10 mA, VDD = 14 V (2) 25 30 35 Output resistance high TA = full range, IOUT = –10 mA, VDD = 14 V (2) 18 45 Ω TA = 25°C, IOUT = 10 mA, VDD = 14 V (2) 1.9 2.2 2.5 Output resistance low TA = full range IOUT = 10 mA, VDD = 14 V (2) 1.2 4.0 Latch-up protection 500 mA SWITCHING TIME tr Rise time (OUTA, OUTB) CLOAD = 1.8 nF 20 40 tf Fall time (OUTA, OUTB) CLOAD = 1.8 nF 15 40 ns td1 Delay, IN rising (IN to OUT) CLOAD = 1.8 nF 25 40 td2 Delay, IN falling (IN to OUT) CLOAD = 1.8 nF 35 50 ENABLE (ENBA, ENBB) VIN_H High-level input voltage LO to HI transition 1.7 2.4 2.9 V VIN_L Low-level input voltage HI to LO transition 1.1 1.8 2.2 V Hysteresis 0.15 0.55 0.90 V RENB Enable impedance VDD = 14 V, ENB = GND 75 100 140 k Ω tD3 Propagation delay time (see Figure 2) CLOAD = 1.8 nF 30 60 ns tD4 Propagation delay time (see Figure 2) CLOAD = 1.8 nF 100 150 ns OVERALL INA = 0 V, INB = 0 V 900 1350 UCC27423 INA = 0 V, INB = HIGH 750 1100 IDD Static operating current, VDD = 15 V, μA INA = HIGH, INB = 0 V 750 1100 ENBA = ENBB = 15 V INA = HIGH, INB = HIGH 600 900 INA = 0 V, INB = 0 V 300 450 UCC27424 INA = 0 V, INB = HIGH 750 1100 IDD Static operating current, VDD = 15 V, μA INA = HIGH, INB = 0 V 750 1100 ENBA = ENBB = 15 V INA = HIGH, INB = HIGH 1200 1800 INA = 0 V, INB = 0 V 600 900 UCC27425 INA = 0 V, INB = HIGH 1050 1600 IDD Static operating current, VDD = 15 V, μA INA = HIGH, INB = 0 V 450 700 ENBA = ENBB = 15 V INA = HIGH, INB = HIGH 900 1350 INA = 0 V, INB = 0 V 300 450 INA = 0 V, INB = HIGH 450 700 All disabled, VDD = 15 V, IDD μA ENBA = ENBB = 0 V INA = HIGH, INB = 0 V 450 700 INA = HIGH, INB = HIGH 600 900 (1) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the combined current from the bipolar and MOSFET transistors. (2) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the Rds(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. Copyright © 2002–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: UCC27423 UCC27424 UCC27425 |
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