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UCC27425DRG4 Datasheet(PDF) 4 Page - Texas Instruments

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Part # UCC27425DRG4
Description  Dual 4-A High Speed Low-Side MOSFET Drivers
Download  34 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

UCC27425DRG4 Datasheet(HTML) 4 Page - Texas Instruments

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UCC27423, UCC27424, UCC27425
SLUS545E – NOVEMBER 2002 – REVISED DECEMBER 2015
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
VDD
Supply voltage
–0.3
16
V
IOUT_DC
Output current (OUTA, OUTB) DC
0.2
A
IOUT_PULSED
Pulsed, (0.5
μs)
4.5
A
VIN
Input voltage (INA, INB)
–5
6 or VDD + 0.3 (whichever is larger)
V
Enable voltage (ENBA, ENBB)
–0.3
6 or VDD + 0.3 (whichever is larger)
V
DGN package
3
W
Power dissipation at
D package
650
TA = 25°C
mW
P package
350
TJ
Junction operating temperature
–55
150
°C
Lead temperature (soldering, 10 s)
300
°C
Tstg
Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
When VDD ≤ 6 V, EN rating max value is 6 V; when VDD > 6 V, EN rating max value is VDD + 0.3 V.
7.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2500
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
±1500
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VDD
Supply voltage
4
15
V
INA and INB
Input voltage
–2
15
V
ENA and ENB
Enable voltage
0
15
V
TJ
Operating junction temperature
–40
125
°C
7.4 Thermal Information
UCC2742x
THERMAL METRIC(1)
D (SOIC)
DGN (MSOP)
P (PDIP)
UNIT
8 PINS
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
107.3
56.6
55.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
52.2
52.8
45.3
°C/W
RθJB
Junction-to-board thermal resistance
47.3
32.6
32.6
°C/W
ψJT
Junction-to-top characterization parameter
10.2
1.8
23.0
°C/W
ψJB
Junction-to-board characterization parameter
46.8
32.3
32.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
5.9
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4
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Copyright © 2002–2015, Texas Instruments Incorporated
Product Folder Links: UCC27423 UCC27424 UCC27425


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