TB67B000HG

2013-5-9

7

Characteristics

Symbol

Rating

Unit

500

Power supply voltage

18

V

(Note 1)

Input voltage

(Note 2)

V

Output current (DC)

2

A

Output current (pulse 1ms)

3

(Note 3)

A

Vreg current

30

mA

Vrefout current

35

mA

Power dissipation

35

(Note 4)

W

Operating temperature

−30 to 115

(Note 5)

°C

Strage temperature

−55 to 150

°C

Note: The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded,

even for a moment. Do not exceed any of these ratings. Exceeding the rating (s) may cause the device

breakdown, damage or deterioration, and may result injury by explosion or combustion.Please use the

TB67B000HG within the specified operating ranges.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 3: Apply pulse

Note 4: Package thermal resistance (

θ j-c = 1 °C/W) with an infinite heat sink at Ta = 25°C

Characteristics

Symbol

Min

Typ.

Max

Unit

50

280

450

Power supply voltage

13.5

15

16.5

V

Oscillation frequency

3.5

5

6.4

MHz

Output current

Iout

―

―

2

A

Operating temperature

−30

(Note 6)

―

115

(Note 6)

°C