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TB67H301FTG Datasheet(PDF) 7 Page - Toshiba Semiconductor |
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TB67H301FTG Datasheet(HTML) 7 Page - Toshiba Semiconductor |
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7 / 22 page  TB67H301FTG 2014-10-01 7 Characteristics Symbol Test Condition Min Typ. Max Unit Recover temperature of thermal shutdown circuit TSDOFF (Reference value *) ― 130 ― °C Hysteresis temperature width of thermal shutdown circuit TSDHYS (Reference value *) ― 40 ― °C Detect voltage for VM decreasing VMD ― ― 4.0 ― V Recover voltage for VM decreasing VMR ― ― 4.2 ― V Hysteresis voltage width for VM decreasing VMHYS (Reference value *) ― 0.2 ― V Detect voltage for VCC decreasing VCCD ― ― 2.7 ― V Recover voltage for VCC decreasing VCCR ― ― 2.8 ― V Hysteresis voltage width for VCC decreasing VCCHYS (Reference value *) ― 0.1 ― V *: Toshiba does not implement testing before shipping. Characteristics of Power Dissipation (Reference value) ・ TB67H301 FTG 0 0 25 50 75 100 125 150 1.0 2.0 3.0 On the PCB (4 layer board FR4 74mm×74mm×1.6mm) Ambient temperature Ta (°C) PD – Ta |
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