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Electronic Components Datasheet Search |
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TB6612FNG Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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TB6612FNG Datasheet(HTML) 6 Page - Toshiba Semiconductor |
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6 / 11 page  TB6612FNG Target characteristics PD - Ta 0.00 0.50 1.00 1.50 0 50 100 150 Ta (℃) (w) ① ② ①IC単体θj-a=160℃/W ②基板実装時 PCB面積 50×50×1.6mm Cu箔面積≧40% ③基板実装時 PCB面積 76.2×114.3×1.6mm Cu箔面積≧30% ③ ① IC only θj – a = 160°C/W ② In boarding PCB area 50 mm×50 mm×1.6 mm Cu area ≥ 40% ③ In boarding PCB area 76.2 mm×114.3 mm×1.6 mm Cu area ≥ 30% PD - Ta Ta = 25°C, IC only 1 ch driving 2 ch driving Iout - Duty 0.0 0.5 1.0 1.5 2.0 2.5 0% 20% 40% 60% 80% 100% Duty (A) 2ch動作時 1ch動作時 Ta=25℃,IC単体 IOUT - Duty Dual-channel operation Single-channel operation Ta = 25°C, IC only 2014-10-01 6 |
Similar Part No. - TB6612FNG |
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Similar Description - TB6612FNG |
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