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TCK321G Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TCK321G Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 13 page TCK321G, TCK322G 2015-10-20 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VINA, VINB -0.3 to 40 V Control voltage VCNT, VSEL -0.3 to 6 V Output voltage VOUT -0.3 to 18 V FLAG voltage VFLAG -0.3 to 6 V Output current IOUT DC 2.0 A Pulse 3.0 (Note 1) Power dissipation PD 1.65 (Note 2) W Operating temperature range Topr −40 to 85 °C Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: 1 ms pulse, 1% duty cycle Note2: Rating at mounting on a board: FR4 board. ( 40 mm × 40 mm × 1.6 mm, Cu 4 layer ) Pin Assignment (Top view/Bottom bump) Product list Part number Over voltage lockout VINA Over voltage lockout VINB FLAG monitored in auto selection mode TCK321G 12.0 V (typ.) 12.0 V (typ.) Q1 TCK322G 15.0 V (typ.) 15.0 V (typ.) Q1 Please ask your local retailer about the devices with other OVLO, logic and functions. 1 2 3 4 A FLAG VSEL CNT GND B VINA VOUT VOUT VINB C VINA VOUT VOUT VINB D VINA VOUT VOUT VINB 1 2 A B C 3 D 4 |
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