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DMN2230UQ Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN2230UQ Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 5 page DMN2230UQ Document number: DS37497 Rev. 1 - 2 2 of 5 www.diodes.com June 2015 © Diodes Incorporated DMN2230UQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Drain Current (Note 6) ID 2.0 A Pulsed Drain Current (Note 7) IDM 7 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) PD 600 mW Thermal Resistance, Junction to Ambient RJA 208 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS 10 µA VGS = 12V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 0.5 1.0 V VDS = VCS, ID = 250µA Static Drain-Source On-Resistance RDS (ON) 81 113 170 110 145 230 m Ω VGS = 4.5V, ID = 2.5A VGS = 2.5V, ID = 1.5A VGS = 1.8V, ID = 1.0A Forward Transfer Admittance |Yfs| 5 S VDS = 5V, ID = 2.4A Diode Forward Voltage (Note 8) VSD 0.8 1.1 V VGS = 0V, IS = 1.05A DYNAMIC CHARACTERISTICS Input Capacitance Ciss 188 pF VDS = 10V, VGS = 0V f = 1.0MHz Output Capacitance Coss 44 pF Reverse Transfer Capacitance Crss 30 pF Total Gate Charge Qg 2.3 nC VDS = 10V, ID = 11.6A Gate-Source Charge Qgs 0.3 nC Gate-Drain Charge Qgd 0.5 nC Turn-On Delay Time td(on) 8 ns VDD = 10V, RL = 10Ω ID = 1A, VGEN = 4.5V, RG = 6Ω Rise Time tr 3.8 Turn-Off Delay Time td(off) 19.6 Fall Time tf 8.3 Notes: 6. Device mounted on FR-4 PCB, or minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. |
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