DMN2230UQ

Document number: DS37497 Rev. 1 - 2

2 of 5

www.diodes.com

June 2015

© Diodes Incorporated

DMN2230UQ

Characteristic

Symbol

Value

Units

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Drain Current (Note 6)

2.0

A

Pulsed Drain Current (Note 7)

7

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

600

mW

Thermal Resistance, Junction to Ambient

208

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

20





V

Zero Gate Voltage Drain Current





1

µA

Gate-Source Leakage





10

µA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

0.5



1.0

V

Static Drain-Source On-Resistance



81

113

170

110

145

230

m

Ω

Forward Transfer Admittance



5



S

Diode Forward Voltage (Note 8)



0.8

1.1

V

DYNAMIC CHARACTERISTICS

Input Capacitance



188



pF

f = 1.0MHz

Output Capacitance



44



pF

Reverse Transfer Capacitance



30



pF

Total Gate Charge



2.3



nC

Gate-Source Charge



0.3



nC

Gate-Drain Charge



0.5



nC

Turn-On Delay Time



8



ns

Rise Time



3.8



Turn-Off Delay Time



19.6



Fall Time



8.3



Notes:

6. Device mounted on FR-4 PCB, or minimum recommended pad layout.

7. Repetitive rating, pulse width limited by junction temperature.

8. Short duration pulse test used to minimize self-heating effect.