Power Amplifier, 13 W

8.5 - 11.75 GHz

Rev. V4

MAAP-015030

2

2

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

2

Electrical Specifications:

Parameter

Units

Min.

Typ.

Max.

Gain (Large Signal) (8.5 - 11.5 GHz)

Gain (Large Signal) (11.5 - 11.75 GHz)

dB

20

19

21

—

Gain

dB

—

25

—

Gain Flatness

dB

—

1

—

Input Return Loss

dB

—

12

—

Output Return Loss

dB

—

10

—

Saturated Output Power (8.5 - 11.5 GHz)

Saturated Output Power (11.5 - 11.75 GHz)

dBm

40

39

41

—

Power Added Efficiency

8.5 - 9.0 GHz

9.0 - 10.0 GHz

10.0 - 11.75 GHz

%

—

35

40

40

—

Drain Bias Voltage

V

—

8.0

—

Drain Current

A

—

5

5.5

Parameter

Absolute Maximum

Input Power

+23 dBm

Drain Voltage

+8.5 V

Gate Voltage

Bias Voltage

Drain Current

< 6.0 A

Gate Current

< 30 mA

Operating Temperature

-40°C to +85°C

+175°C

1. Exceeding any one or combination of these limits may cause

permanent damage to this device.

2. MACOM does not recommend sustained operation near

these survivability limits.

Typical thermal resistance (Өjc) = 5.7°C/W.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.