Power Amplifier, 15 W

8.5 - 10.5 GHz

Rev. V1

MAAP-015036

1

1

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1

Features

 15 W Power Amplifier

 42 dBm Saturated Pulsed Output Power

 17 dB Large Signal Gain

 Dual Sided Bias Architecture

 On Chip Bias Circuit

 100% On-Wafer DC, RF and Output Power

Testing

 100% Visual Inspection to MIL-STD-883 Method

2010

Description

The MAAP-015036 is a two stage GaAs MMIC

power amplifier operating from 8.5 - 10.5 GHz, with

a saturated pulsed output power of 42 dBm and a

large signal gain of 18 dB.

This power amplifier uses GaAs pHEMT device

technology and is based upon optical gate

lithography to

ensure

high

repeatability

and

uniformity.

The chip has surface passivation for

protection and backside via holes and gold

metallisation to allow a conductive epoxy die attach

process.

This device is well suited for communications, Point

to Point radio and radar applications.

Ordering Information

MAAP-015036-DIE

MAAP-015036-DIEEV1

Sample Board

Direct Gate Bias

MAAP-015036-DIEEV2

Sample Board

On-Chip Gate Bias

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

Functional Schematic

1

15

2

GND

16

GND

3

17

GND

4

18

5

GND

19

6

20

GND

7

21

8

GND

22

9

23

GND

10

24

11

GND

25

12

GND

26

GND

13

27

14

28

1. Die quantity varies.

2. Backside metal is RF, DC and thermal ground.