Low Noise Active Mixer

4 - 23 GHz

Rev. V2

MAMX-011023

2

2

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

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2

IF Freq. = 2 GHz, LO Drive = -2 dBm @ 10 GHz , RF Freq. = 12 GHz

Parameter

Absolute Maximum

Total Input Power (RF+LO)

15 dBm

Drain Voltage

4 V / 35 mA

Gate Voltage

1.5 V

+150°C

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

5. Exceeding any one or combination of these limits may cause

permanent damage to this device.

6. MACOM does not recommend sustained operation near these

survivability limits.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Gain

6 GHz

12 GHz

20 GHz

dB

—

7

—

4

9

3

—

Noise Figure

6 GHz

12 GHz

20 GHz

dB

—

8

7

10

—

RF Return Loss

5 - 25 GHz

dB

—

8

—

IF Return Loss

DC - 8 GHz

dB

—

2

—

Input IP3

Lower Sideband

Upper Sideband

dBm

—

+5

+8

—

LO Isolation

LO to IF

2LO to IF

3LO to IF

dB

—

13

85

100

—

Bias Current

mA

—

15

—

Bias Current

mA

—

0.5

—

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

Class 1A (HBM) devices.