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DMC3032LSD Datasheet(PDF) 3 Page - Diodes Incorporated |
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DMC3032LSD Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 9 page DMC3032LSD Document number: DS32153 Rev. 2 - 2 3 of 9 www.diodes.com July 2014 © Diodes Incorporated DMC3032LSD Electrical Characteristics N-CHANNEL – Q1 @TA = +25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1 1.45 2.1 V VDS = VGS, IC = 250µA Static Drain-Source On-Resistance RDS (ON) - 23 32 mΩ VGS = 10V, IC = 7A 32 46 VGS = 4.5V, IC = 5.6A Forward Transfer Admittance |Yfs| - 7.6 - S VDS = 5V, IC = 7A Diode Forward Voltage (Note 7) VSD - 0.7 1 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 404.5 - pF VDS = 15V, VGS = 0V, f = 1MHz Output Capacitance Coss - 51.8 - pF Reverse Transfer Capacitance Crss - 45.1 - pF Gate Resistance Rg - 1.5 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (10V) Qg - 9.2 - nC VGS = 10V, VDS = 15V, ID = 5.8A Gate-Source Charge Qgs - 1.2 - nC Gate-Drain Charge Qgd - 1.8 - nC Turn-On Delay Time tD(on) - 3.4 - ns VGS = 10V, VDS = 15V, RG = 3Ω, RL = 2.6Ω Turn-On Rise Time tr - 6.18 - ns Turn-Off Delay Time tD(off) - 13.92 - ns Turn-Off Fall Time tf - 2.84 - ns 0 4 8 12 16 20 01 2 3 4 5 Fig. 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V) DS V = 2.0V GS V = 2.5V GS V = 3.0V GS V = 4.5V GS V = 8.0V GS 0 4 8 12 16 20 01 2 3 4 Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V) GS V = 5V DS T = -55°C A T = 25°C A T = 125°C A T = 150°C A T = 85°C A |
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Similar Description - DMC3032LSD_14 |
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