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DMN2600UFB Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN2600UFB Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMN2600UFB Document number: DS31983 Rev. 5 - 2 2 of 6 www.diodes.com May 2015 © Diodes Incorporated DMN2600UFB Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 25 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 4) Steady State TA = +25°C TA = +85°C ID 1.3 0.9 A Pulsed Drain Current IDM 3.0 A Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 0.54 W Thermal Resistance, Junction to Ambient @TA = +25°C RθJA 234 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 25 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - 1 A VDS = 25V, VGS = 0V Gate-Source Leakage IGSS - - 10 A VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.45 - 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - - 350 m Ω VGS = 4.5V, ID = 200mA 450 VGS = 2.5V, ID = 100mA 600 VGS = 1.8V, ID = 75mA Forward Transfer Admittance |Yfs| 40 - - mS VDS = 3V, ID = 200mA Diode Forward Voltage VSD - - 1.2 V VGS = 0V, IS = 300mA DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss - 70.13 - pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 7.56 - pF Reverse Transfer Capacitance Crss - 5.59 - pF Gate Resistance Rg - 72.3 - Ω VDS =0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 0.85 - nC VGS = 4.5V, VDS = 15V, ID = 1A Gate-Source Charge Qgs - 0.16 - nC Gate-Drain Charge Qgd - 0.11 - nC Turn-On Delay Time tD(on) - 4.1 - ns VDS = 15V, RL=15Ω VGS = 10V, RG = 6Ω Turn-On Rise Time tr - 11.5 - ns Turn-Off Delay Time tD(off) - 34.8 - ns Turn-Off Fall Time tf - 20.9 - ns Notes: 4. Device mounted on FR-4 substrate PCB board, with minimum recommended pad layout. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. |
Similar Part No. - DMN2600UFB_15 |
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Similar Description - DMN2600UFB_15 |
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