DMN2600UFB

Document number: DS31983 Rev. 5 - 2

2 of 6

www.diodes.com

May 2015

© Diodes Incorporated

DMN2600UFB

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

25

V

Gate-Source Voltage

±8

V

Continuous Drain Current (Note 4)

Steady

State

1.3

0.9

A

Pulsed Drain Current

3.0

A

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

0.54

W

234

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

25

-

-

V

-

-

1

A

Gate-Source Leakage

-

-

10

A

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.45

-

1.0

V

Static Drain-Source On-Resistance

-

-

350

m

Ω

450

600

Forward Transfer Admittance

40

-

-

mS

Diode Forward Voltage

-

-

1.2

V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

-

70.13

-

pF

f = 1.0MHz

Output Capacitance

-

7.56

-

pF

Reverse Transfer Capacitance

-

5.59

-

pF

Gate Resistance

-

72.3

-

Ω

Total Gate Charge

-

0.85

-

nC

Gate-Source Charge

-

0.16

-

nC

Gate-Drain Charge

-

0.11

-

nC

Turn-On Delay Time

-

4.1

-

ns

Turn-On Rise Time

-

11.5

-

ns

Turn-Off Delay Time

-

34.8

-

ns

Turn-Off Fall Time

-

20.9

-

ns

Notes:

4. Device mounted on FR-4 substrate PCB board, with minimum recommended pad layout.

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.