POWERDI is a registered trademark of Diodes Incorporated.

DMTH4007SPSQ

Document number: DS38160 Rev. 1 - 2

3 of 8

www.diodes.com

November 2015

© Diodes Incorporated

DMTH4007SPSQ

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

40

—

—

V

Zero Gate Voltage Drain Current

—

—

—

1

μA

(Note 9)

—

—

100

μA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

2

—

4

V

Static Drain-Source On-Resistance

—

4.9

7.6

m

Ω

Diode Forward Voltage

—

—

1.2

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

2,082

—

pF

f = 1MHz

Output Capacitance

—

790

—

Reverse Transfer Capacitance

—

113

—

Gate Resistance

0.1

0.46

1.4

Ω

Total Gate Charge

—

41.9

—

nC

Gate-Source Charge

—

10

—

Gate-Drain Charge

—

11.5

—

Turn-On Delay Time

—

7

—

ns

Turn-On Rise Time

—

11.5

—

Turn-Off Delay Time

—

15.6

—

Turn-Off Fall Time

—

8.8

—

Body Diode Reverse Recovery Time

—

29.9

—

ns

Body Diode Reverse Recovery Charge

—

23

—

nC

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

10. Package limited.