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BQ24123RHLTG4 Datasheet(PDF) 4 Page - Texas Instruments |
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BQ24123RHLTG4 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 39 page bq24120, bq24123, bq24125 SLUS688H – MARCH 2006 – REVISED NOVEMBER 2015 www.ti.com Pin Functions (continued) PIN I/O DESCRIPTION NAME bq24120 bq24123 bq24125 PGND 17,18 17,18 17,18 Power ground input Charge current-sense input. Battery current is sensed via the voltage drop SNS 15 15 15 I developed on this pin by an external sense resistor in series with the battery pack. A 0.1 μF capacitor to VSS is required. Charge status 1 (open-drain output). When the transistor turns on indicates STAT1 2 2 2 O charge in process. When it is off and with the condition of STAT2 indicates various charger conditions (See Table 1) Charge status 2 (open-drain output). When the transistor turns on indicates STAT2 19 19 19 O charge is done. When it is off and with the condition of STAT1 indicates various charger conditions (See Table 1) Temperature sense input. This input monitors its voltage against an internal TS 12 12 12 I threshold to determine if charging is allowed. Use an NTC thermistor and a voltage divider powered from VTSB to develop this voltage. (See Figure 9) Timer and termination control. Connect a capacitor from this node to VSS to set TTC 7 7 7 I the bqSWITCHER timer. When this input is low, the timer and termination detection are disabled. VCC 6 6 6 I Analog device input. A 0.1 μF capacitor to VSS is required. VSS 10 10 10 Analog ground input TS internal bias regulator voltage. Connect capacitor (with a value between a VTSB 11 11 11 O 0.1 μF and 1μF) between this output and VSS. There is an internal electrical connection between the exposed thermal pad and Exposed VSS. The exposed thermal pad must be connected to the same potential as the Thermal Pad Pad Pad VSS pin on the printed circuit board. The power pad can be used as a star ground Pad connection between VSS and PGND. A common ground plane may be used. VSS pin must be connected to ground at all times. 7 Specifications 7.1 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Supply voltage (with respect to VSS) IN, VCC 20 V STAT1, STAT2, PG, CE, CELLS, SNS, BAT –0.3 20 V OUT –0.7 20 V Input voltage (with respect to VSS and PGND) TS, TTC 7 V VTSB 3.6 V ISET1, ISET2 3.3 V Voltage difference between SNS and BAT inputs (VSNS - VBAT) ±1 V Output sink STAT1, STAT2, PG 10 mA Output current (average) OUT 2.2 A Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds 300 °C TA Operating free-air temperature –40 85 °C TJ Junction temperature –40 125 °C Tstg Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±500 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 4 Submit Documentation Feedback Copyright © 2006–2015, Texas Instruments Incorporated Product Folder Links: bq24120 bq24123 bq24125 |
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