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BQ24123RHLTG4 Datasheet(PDF) 4 Page - Texas Instruments

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Part # BQ24123RHLTG4
Description  Single-Chip Switched-Mode, Li-Ion, and Li-Polymer Charge-Management IC
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

BQ24123RHLTG4 Datasheet(HTML) 4 Page - Texas Instruments

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bq24120, bq24123, bq24125
SLUS688H – MARCH 2006 – REVISED NOVEMBER 2015
www.ti.com
Pin Functions (continued)
PIN
I/O
DESCRIPTION
NAME
bq24120
bq24123
bq24125
PGND
17,18
17,18
17,18
Power ground input
Charge current-sense input. Battery current is sensed via the voltage drop
SNS
15
15
15
I
developed on this pin by an external sense resistor in series with the battery pack.
A 0.1
μF capacitor to VSS is required.
Charge status 1 (open-drain output). When the transistor turns on indicates
STAT1
2
2
2
O
charge in process. When it is off and with the condition of STAT2 indicates
various charger conditions (See Table 1)
Charge status 2 (open-drain output). When the transistor turns on indicates
STAT2
19
19
19
O
charge is done. When it is off and with the condition of STAT1 indicates various
charger conditions (See Table 1)
Temperature sense input. This input monitors its voltage against an internal
TS
12
12
12
I
threshold to determine if charging is allowed. Use an NTC thermistor and a
voltage divider powered from VTSB to develop this voltage. (See Figure 9)
Timer and termination control. Connect a capacitor from this node to VSS to set
TTC
7
7
7
I
the bqSWITCHER timer. When this input is low, the timer and termination
detection are disabled.
VCC
6
6
6
I
Analog device input. A 0.1
μF capacitor to VSS is required.
VSS
10
10
10
Analog ground input
TS internal bias regulator voltage. Connect capacitor (with a value between a
VTSB
11
11
11
O
0.1
μF and 1μF) between this output and VSS.
There is an internal electrical connection between the exposed thermal pad and
Exposed
VSS. The exposed thermal pad must be connected to the same potential as the
Thermal
Pad
Pad
Pad
VSS pin on the printed circuit board. The power pad can be used as a star ground
Pad
connection between VSS and PGND. A common ground plane may be used. VSS
pin must be connected to ground at all times.
7 Specifications
7.1 Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Supply voltage (with respect to VSS)
IN, VCC
20
V
STAT1, STAT2, PG, CE, CELLS, SNS, BAT
–0.3
20
V
OUT
–0.7
20
V
Input voltage (with respect to VSS and PGND)
TS, TTC
7
V
VTSB
3.6
V
ISET1, ISET2
3.3
V
Voltage difference between SNS and BAT inputs (VSNS - VBAT)
±1
V
Output sink
STAT1, STAT2, PG
10
mA
Output current (average)
OUT
2.2
A
Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds
300
°C
TA
Operating free-air temperature
–40
85
°C
TJ
Junction temperature
–40
125
°C
Tstg
Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±500
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
4
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Copyright © 2006–2015, Texas Instruments Incorporated
Product Folder Links: bq24120 bq24123 bq24125


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