GaN Wideband Transistor 48 V, 100 W

DC - 2 GHz

Rev. V1

NPT2022

4

4

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4

Frequency

(MHz)

(

)

(

)

(W)

(dB)

Drain Efficiency

500

1.3 + j0.8

5.8 + j2.5

152

26

71

900

1.1 - j1.3

5.0 + j2.8

139

22

70

1800

1.3 - j5.7

3.2 - j1.4

133

17

66

2000

1.4 - j6.3

2.3 - j2.3

119

16

66

Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance

Gain vs. Output Power

Drain Efficiency vs. Output Power

Impedance Reference

14

16

18

20

22

24

26

28

25

30

35

40

45

50

55

500 MHz

900 MHz

1800 MHz

2000 MHz

Output Power (dBm)

0

10

20

30

40

50

60

70

80

25

30

35

40

45

50

55

500 MHz

900 MHz

1800 MHz

2000 MHz

Output Power (dBm)