Cascadable Amplifier

2 to 6 GHz

Rev. V3

A61 / SMA61

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Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC -54º to +85ºC*

Frequency

GHz

1.8-6.2

2.0-6.0

2.0-6.0

Small Signal Gain (min)

dB

7.5

6.5

6.0

Gain Flatness (max)

dB

±0.4

±0.7

±0.9

Reverse Isolation

dB

14

Noise Figure (max)

dB

3.2

4.3

4.8

Power Output

@ 1 dB comp. (min)

dBm

12.5

11.0

10.5

IP3

dBm

+25

IP2

dBm

+37

Second Order Harmonic IP

dBm

+42

VSWR Input / Output (max)

1.5:1 / 1.5:1

2.0:1 / 2.0:1

2.1:1 / 2.1:1

DC Current @ 5 Volts (max)

mA

35

40

42

Features

 WIDE BANDWIDTH: 2-6 GHz

 MEDIUM OUTPUT LEVEL: +12.5 dBm (TYP.)

 LOW NOISE: 3.2 dB (TYP.)

Description

The A61 RF amplifier is a discrete hybrid design, which uses

thin film manufacturing processes for accurate performance

and high reliability.

This single stage GaAs FET feedback amplifier design displays

impressive performance characteristics over a broadband

frequency range. An RF choke is used for DC power supply

decoupling.

Both TO-8 and Surface Mount packages are hermetically

sealed, and MIL-STD-883 environmental screening is available

.

Product Image

Ordering Information

Part Number

Package

A61

TO-8

SMA61

Surface Mount

CA61 **

SMA Connectorized

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

+125ºC

DC Voltage

+6 V

Continuous Input Power

13 dBm

Short Term Input power

(1 minute max.)

50 mW

Peak Power (3 µsec max.)

0.25 W

“S” Series Burn-In

Temperature (case)

+125ºC

Parameter

Rating

132ºC/W

0.171 W

Junction Temperature Rise

23ºC

** The connectorized version is not RoHs compliant.