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MA4P504-1072T Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MA4P504-1072T Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 5 page MELF PIN Diode 1 - 4000 MHz Rev. V2 MA4P504-1072 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 2 Electrical Specifications: TA = 25°C Parameter Test Conditions Units Min. Typ. Max. Forward Voltage + 50 mA V — — 1.0 Reverse Leakage Current -500 V nA — — | -100 | Total Capacitance2 -100 V @ 1 MHz pF — — 0.50 Package Capacitance — pF — 0.16 — Input IP3 PIN = +10 dBm, Spacing = 1 MHz @ 1000 MHz dBm — >54 — Thermal Resistance Diode attached to infinite Heatsink Diode in air °CW — 16 48 20 51 Power Dissipation Diode attached to infinite Heatsink3 Diode in air4 W — — 7.5 2.9 Minority Carrier Lifetime IF = +10 mA, IR = -6 mA µs — 1.0 — Series Resistance +100 mA, 100 MHz Ω — — 0.60 Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 1C devices. Absolute Maximum Ratings5,6 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Values will de-rate linearly over temperature. Parameter Absolute Maximum Forward Voltage7 1.0 V Reverse Voltage7 500 V Operating Temperature -65°C to +175°C Storage Temperature -65°C to +200°C 2. Chip junction capacitance + parasitic package capacitance. 3. De-rate linearly by -50.0 mW/°C to 0 W @ +125°C. 4. De-rate linearly by -19.3 mW/°C to 0 W @ +125°C. |
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