MELF PIN Diode

1 - 4000 MHz

Rev. V2

MA4P504-1072

2

2

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2

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Forward Voltage

+ 50 mA

V

—

—

1.0

Reverse Leakage Current

-500 V

nA

—

—

| -100 |

-100 V @ 1 MHz

pF

—

—

0.50

Package Capacitance

—

pF

—

0.16

—

Input IP3

@ 1000 MHz

dBm

—

>54

—

Thermal Resistance

Diode attached to infinite Heatsink

Diode in air

°CW

—

16

48

20

51

Power Dissipation

W

—

—

7.5

2.9

Minority Carrier Lifetime

µs

—

1.0

—

Series Resistance

+100 mA, 100 MHz

Ω

—

—

0.60

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

These

electronic

devices

are

sensitive

to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these Class 1C

devices.

5. Exceeding any one or combination of these limits may cause

permanent damage to this device.

6. MACOM does not recommend sustained operation near these

survivability limits.

7. Values will de-rate linearly over temperature.

Parameter

Absolute Maximum

1.0 V

500 V

Operating Temperature

-65°C to +175°C

Storage Temperature

-65°C to +200°C

2. Chip junction capacitance + parasitic package capacitance.

3. De-rate linearly by -50.0 mW/°C to 0 W @ +125°C.

4. De-rate linearly by -19.3 mW/°C to 0 W @ +125°C.