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TPD7104F Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPD7104F Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 13 page TPD7104F 2014-10-8 1 TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7104F 1 channel High-Side N channel Power MOSFET Gate Driver TPD7104F is a 1channel high-side N channel power MOSFET gate driver. This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications. Features Charge pump circuit is built in Over current protection circuit is built in Housed in the PS-8 package and supplied in embossed carrier tape Pin Assignment (top view) Marking Note: That because of its MOS structure, this product is sensitive to static electricity Start of commercial production 2014-9 SON8-P-0303-0.65S Weight: 0.017 g (typ.) Lot No. 7104F Note: ● on the lower left of the marking indicates Pin 1 *Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Part No. (or abbreviation code) 1 VDD 2 IS 3 OUT 4 GND 8 RISref 7 DIAG 6 IN 5 GND Note: 4pin and 5pin should short-circuit externally. |
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