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MAAM26100-B1 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MAAM26100-B1 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 3 page GaAs MMIC Power Amplifier 2 - 6 GHz Rev. V7 MAAM26100-B1 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 1 Features Saturated Power: 30.5 dBm Typical Gain: 19 dB Typical Power Added Efficiency: 30% DC Decoupled RF Input and Output Lead-Free 7-Lead Ceramic Package RoHS* Compliant and 260°C Reflow Compatible Description The MAAM26100-B1 is a GaAs MMIC two stage high efficiency power amplifier in a small, lead-free, 7-leadceramic package. The MAAM26100 -B1 is a fully monolithic design which eliminates the need for external circuitry in 50-ohm systems. The MAAM26100-B1 is ideally suited for driver amplifiers and transmitter outputs in UMTS applications, test equipment, electronic warfare jammers, missile subsystems and phased array radars. The MAAM26100-B1 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability. Ordering Information Part Number Package MAAM26100-B1 7 lead, Ceramic (CR-2) MAAM26100-B1G 7 lead, Ceramic (CR-2) with Gull Wing Pin Configuration Pin No. Function Pin No. Function 1 VGG 5 VD1 2 RF Output 6 Internal Ground 3 Internal Ground 7 RF Input 4 VD2 Absolute Maximum Ratings 1,2 Parameter Absolute Maximum VDD +9 V VGG -6 V to -3 V RF Input Power +17 dBm Channel Temperature 150°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device and will void product warranty. 2. M/A-COM Tech does not recommend sustained operation near these survivability limits. 3. Nominal bias is obtained by first connecting –5 volts to pin 1 (VGG), followed by connecting +8 volts to pin 5 (VD1) and pin 4 (VD2). Note sequence. 4. RF ground and thermal interface are the case bottom. Adequate heat sinking is required. Functional Diagram 3,4 7 RF IN 2 RF OUT VGG 1 6 3 VDD 1000 pF 1000 pF 4 5 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. |
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