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SURMOUNT™ 25μM PIN Diodes

RoHS Compliant

Rev. V5

MADP-017025-1314

MADP-030025-1314

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

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Case Style ODS 1314

(unless otherwise specified)

1) Exceeding these limits may cause permanent damage

Chip Dimensions

DIM

INCHES

MM

Min

Max

Min

Max

A

0.060

0.062

1.525

1.575

B

0.031

0.032

0.775

0.825

C

0.004

0.008

0.102

0.203

D

0.019

0.021

0.475

0.525

E

0.019

0.021

0.475

0.525

F

0.019

0.021

0.475

0.525

G

0.029

0.031

0.725

0.775

Notes:

1) Backside metal: 0.1microns thick.

2) Yellow area with hatch lines indicate backside ohmic gold

contacts.

3) Both devices have same outline dimensions ( A to G).

Features

 0603 Outline

 Surface Mount

 25µm I-Region Length Devices

 No Wirebonds Required

 Silicon Nitride Passivation

 Polymer Scratch Protection

 Low Parasitic Capacitance and Inductance

 High Average and Peak Power Handling

Description

This device is a silicon, glass PIN diode surmount chip

This device features two silicon pedestals embedded in a

low loss, low dispersion glass. The diode is formed on the

top of one pedestal and connections to the backside of the

device are facilitated by making the pedestal sidewalls

electrically conductive. Selective backside metallization is

applied producing a surface mount device. This vertical

topology provides for exceptional heat transfer. The

topside is fully encapsulated with silicon nitride and has an

additional polymer layer for scratch and impact protection.

These protective coatings prevent damage to the junction

and the anode air-bridge during handling and assembly.

Applications

These packageless devices are suitable for usage in

moderate incident power, ≤50dBm/C.W. or where the peak

power is ≤75dBm, pulse width is 1μS, and duty cycle is

0.01%. Their low parasitic inductance, 0.4 nH, and

excellent RC constant, make these devices a superior

choice for higher frequency switch elements when

compared to their plastic package counterparts

.

Parameter

Absolute Maximum

Forward Current

500 mA

Reverse Voltage

- 135 V

Operating Temperature

-55°C to +125°C

Storage Temperature

-55 °C to +150°C

Junction Temperature

+175°C

C.W. Incident Power

50dBm

Mounting Temperature

+280°C for 30 seconds