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TPS24751RUVT Datasheet(PDF) 6 Page - Texas Instruments |
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TPS24751RUVT Datasheet(HTML) 6 Page - Texas Instruments |
6 / 46 page TPS24750, TPS24751 SLVSC87A – OCTOBER 2013 – REVISED SEPTEMBER 2015 www.ti.com 7.5 Electrical Characteristics –40°C ≤ TJ ≤ 125°C, VCC = 12 V, VEN = 3 V, RSET = 191 Ω, RIMON = 5 kΩ, and RPROG = 50 kΩ to GND. All voltages referenced to GND, unless otherwise noted. PARAMETER CONDITIONS MIN NOM MAX UNIT VCC UVLO threshold, rising 2.20 2.32 2.45 V UVLO threshold, falling 2.10 2.22 2.35 V UVLO hysteresis(1) 0.1 V Enabled ― IOUT + IVCC + ISENSE 0.5 1 1.4 mA Supply current Disabled(1) ― EN = 0 V, IOUT + IVCC + ISENSE 0.45 mA OUT 1 A ≤ IOUT ≤ 10 A at TJ = 25°C 3 3.5 m Ω RON On-resistance 1 A ≤ IOUT ≤ 10 A at TJ =125°C 5 6 m Ω Input bias current VOUT = 12 V 10 16 30 µA Diode Forward Voltage VEN = 0V, IOUT = –100 mA, VOUT > VSENSE 0.8 1 V VEN = 0V, VOUT = 0 V, VDRAIN = 18 V at 25°C 0 1 µA Leakage Current - DRAIN to OUT VEN = 0V, VOUT = 0 , VDRAIN = 18 V at 125°C 2 5 µA Ciss Input Capacitance 2710 3250 pF Coss Output Capacitance VGS = 0V, VDRAIN-OUT = 15V, f = 1 MHz 635 762 pF Crss Reverse Transfer Capacitance 48 60 pF Qg Gate Charge Total (4.5V) 17.5 21.5 nC VDRAIN-OUT = 15V, IOUT = 20 A Qg(th) Gate Charge at Vth 4.1 nC EN Threshold voltage, falling 1.2 1.3 1.4 V Hysteresis(1) 50 mV Input leakage current 0 V ≤ VEN ≤ 30 V –1 0 1 µA Turnoff time EN ↓ to VGATE < 1 V 3 8 25 µs Deglitch time EN ↑ 8 14 21 µs Disable delay EN ↓ to GATE ↓, CGATE = 0, tpff50–90, See Figure 28 0.1 0.4 1.8 µs Turn-On Delay COUT = 2.2 uF, VEN ↑ to VOUT ↑, VEN: 0 V to 3 V, VOUT : 90% VCC 800 µs OV Threshold voltage, rising 1.25 1.35 1.45 V Hysteresis(1) 60 mV Input leakage current 0 V ≤ VOV ≤ 30 V –1 0 1 µA Deglitch time OV rising 0.5 1.2 1.5 µs FLTb Output low voltage Sinking 2 mA 0.11 0.25 V Input leakage current VFLTb = 0 V, 30 V –1 0 1 µA PGb Threshold V(SENSE – OUT) rising, PGb going high 140 220 340 mV Hysteresis(1) Measured V(SENSE – OUT) falling, PGb going low 70 mV Output low voltage Sinking 2 mA 0.11 0.25 V Input leakage current VPGb = 0 V, 30 V –1 0 1 µA Delay (deglitch) time Rising or falling edge 2 3.4 6 ms PROG Bias voltage Sourcing 10 µA 0.65 0.675 0.7 V Input leakage current VPROG = 1.5 V –0.2 0 0.2 µA TIMER Sourcing current VTIMER = 0 V 8 10 12 µA VTIMER = 2 V 8 10 12 µA Sinking current VEN = 0 V, VTIMER = 2 V 2 4.5 7 mA Upper threshold voltage 1.3 1.35 1.4 V (1) These parameters are provided for reference only and do not constitute part of TI’s published device specifications for purposes of TI’s product warranty. 6 Submit Documentation Feedback Copyright © 2013–2015, Texas Instruments Incorporated Product Folder Links: TPS24750 TPS24751 |
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