Surface Mount Low Barrier Schottky Diode

Rev. V9

MA4E2054 Series

3

3

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3

Maximum Ratings

* At 125 °C case temperature. Derate linearly to zero watts at 125 °C case temperature.

Parameter

Maximum Ratings

Unit

Operating Temperature

-65 to +125

°C

Storage Temperature

-65 to +125

°C

Incident RF Power (CW)

75*

mW

Reverse Voltage @ 25 °C

3

V

Forward Current

20

mA

Soldering Temperature (Standard Part #)

+235 for 5 sec.

°C

Soldering Temperature (Lead Free Part #)

°C

+260 for 5 sec.

Electrical Specifications @ +25 °C

Parameter

Condition

Symbol

Specification

Breakdown Voltage

3.0 V min.

Reverse Leakage Current

100 nA max.

Reverse Leakage Current

500 nA max.

Total Capacitance

f = 1 MHz

0.30 pF max.

17 Ohms max.

Forward Voltage

250 mV min.

350 mV min.

20 mV max.

1. Applies to MA4E2054B, MA4E2054D and MA4E2054E configurations.

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Typical RF Performance @ +25 °C in Chip Form, Mounted on a Microstrip Fixture

Parameter

Conditions

Typical Value

f = 9.375 GHz

LO = 0 dBm

5.7 dB (SSB)

IF Impedance

200 ohms

Tangential Signal

BW = 2 MHz

Video NF = 1.5 dB

-55 dBm

20 mV

20 mV

1. Fixture tuned to 9.375 GHz.

2. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned fixture performance.