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MA8334-004 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Part # MA8334-004
Description  High Power Multi-Throw PIN Diode Switch Modules
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MA8334-004 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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High Power Multi-Throw PIN Diode Switch Modules
V5
MA8334 Series
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1
Features
 SPDT and SP3T Series Diode Designs
 Low Intermodulation Distortion, 80 dBc
 High Average Power, 100 W
 Wide Bandwidth, 10 MHz to 1000 MHz
 Low Insertion Loss
 High Isolation
 RoHS Compliant
Description and Applications
M/A-COM Technology Solutions MA8334 Series
of multi-throw high power switch modules are
SPDT and SP3T devices intended for use from
10 MHz to 1000 MHz. They are designed to func-
tion with an input power of 100 watts, CW, into a
50 Ω load with a nominal source VSWR of 1.3:1.
These switch modules are constructed using ad-
vanced hybrid technology and utilize PIN diode
chips that have been optimized for low loss and
high reliability. These switch modules make use of
M/A-COM Tech’s, high voltage, CERMACHIP™
PIN diode chip distinguished by its low thermal
resistance and low intermodulation distortion. Ap-
plications for the MA8334 switch modules include
100W incident power T/R antenna and diversity
switches. Typical bias conditions for nominal
switch operation are +50mA @ +1V for the low
loss condition and -100V @ 0 mA for isolation.
Absolute Maximum Ratings 1
1. Operation of this device above any one of these parameters
may cause permanent damage.
Parameter
Absolute Maximum
Reverse Voltage
Voltage Rating per Diode
Forward Current
+ 250 mA per diode
Operating Temperature
-65 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
Junction Temperature
+175 °C
Power Dissipation
5 W @ + 25 °C .
derated to 0 W @ + 125 °C .
Circuit for Common Cathode Biasing
Internal Wiring Diagram
Recommended D.C. Bias :
Low Loss: +50 mA @+ 1V, Isolation:-100V @ 0mA
MA
8334
-004
MA
8334
-001
S2
S3
S4
S4
S2
S3
S1


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