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MA8334-004 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MA8334-004 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 4 page High Power Multi-Throw PIN Diode Switch Modules V5 MA8334 Series 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 1 Features SPDT and SP3T Series Diode Designs Low Intermodulation Distortion, 80 dBc High Average Power, 100 W Wide Bandwidth, 10 MHz to 1000 MHz Low Insertion Loss High Isolation RoHS Compliant Description and Applications M/A-COM Technology Solutions MA8334 Series of multi-throw high power switch modules are SPDT and SP3T devices intended for use from 10 MHz to 1000 MHz. They are designed to func- tion with an input power of 100 watts, CW, into a 50 Ω load with a nominal source VSWR of 1.3:1. These switch modules are constructed using ad- vanced hybrid technology and utilize PIN diode chips that have been optimized for low loss and high reliability. These switch modules make use of M/A-COM Tech’s, high voltage, CERMACHIP™ PIN diode chip distinguished by its low thermal resistance and low intermodulation distortion. Ap- plications for the MA8334 switch modules include 100W incident power T/R antenna and diversity switches. Typical bias conditions for nominal switch operation are +50mA @ +1V for the low loss condition and -100V @ 0 mA for isolation. Absolute Maximum Ratings 1 1. Operation of this device above any one of these parameters may cause permanent damage. Parameter Absolute Maximum Reverse Voltage Voltage Rating per Diode Forward Current + 250 mA per diode Operating Temperature -65 °C to +125 °C Storage Temperature -65 °C to +150 °C Junction Temperature +175 °C Power Dissipation 5 W @ + 25 °C . derated to 0 W @ + 125 °C . Circuit for Common Cathode Biasing Internal Wiring Diagram Recommended D.C. Bias : Low Loss: +50 mA @+ 1V, Isolation:-100V @ 0mA MA 8334 -004 MA 8334 -001 S2 S3 S4 S4 S2 S3 S1 |
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