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MABC-001000-DPS0TL Datasheet(PDF) 5 Page - M/A-COM Technology Solutions, Inc.

Part # MABC-001000-DPS0TL
Description  GaN Bias Controller/Sequencer Module
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MABC-001000-DPS0TL Datasheet(HTML) 5 Page - M/A-COM Technology Solutions, Inc.

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GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +5 V
Rev. V1
MABC-001000-DPS00L
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5
Applications Section
Part
Value
MFG
MFG P/N
R1
2.7 kΩ
Panasonic
ERJ-2GEJ272X
R2,R3 1.02 kΩ
Vishay
CRCW25121K02FKEGHP
R4,R5
402 Ω
Vishay
CRCW2512402RFKEG
VR1
10 kΩ
Bourns
3224W-1-103E
Q1
P-Channel
MOSFET
IR
IRF5210SPBF
Application Option 1:
Fixed Gate with Pulsed Drain Biasing
Figure
1
shows
a
block
diagram
of
the
MABC-001000-DPS00L
module
with
the
recommended external components to support this
application option. See Table 1 for component
recommendations and values.
Figure 1. Fixed Gate/Pulsed Drain Biasing
Module Layout Guidelines
Reference the Product View, Pin Configuration
Table on page 1, and the Recommended Landing
Pattern on page 7.
The following recommendations should be followed
when the MABC-001000-DPS00L module is used to
bias a high-power RF device or amplifier. The input
and output locations were determined so that the
layout and signal routing could be optimized when
interfacing
with
a
high-power
amplifier
assembly.
The negative gate voltage input and outputs are
located on the left side of the module and should
be located as close as possible to the gate bias
pads
on
the
high-power
am plifier
assembly.
The positive pulsed voltages are located on the
right side of the module and should be located
as close as possible to the external MOSFET
switch. The MOSFET switch drain should be
located as close as possible to the drain bias
pads on the high-power amplifier assembly. The
charge
storage
capacitors
should
be
located as close as possible to the MOSFET
switch source terminal pads.
The module ground pads are located at Pins 7,
13, and 14.
Route all signal lines and ground returns to be
as short as possible and implement a ground
plane on the back of the printed wiring board
(PWB) if that option is available to the
designer. Following these layout criteria will
minimize circuit parasitics that degrade the
performance of the pulsed signal.
Table 1. Recommended Parts List for Fixed
Gate/Pulsed Drain Biasing
RFIN
RFOUT
MABC-001000-
DPS00L
DUT
+50 V
-8 V
TTL
3
9
5
4
6
1
R1
R2
VR1
COUT
CIN
R4
R3
R5
CSTORAGE
Q1
+5 V
11


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