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IS46DR81280C Datasheet(PDF) 2 Page - Integrated Silicon Solution, Inc

Part # IS46DR81280C
Description  Differential data strobe
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS46DR81280C Datasheet(HTML) 2 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
6/4/2013
IS43/46DR81280C, IS43/46DR16640C
GENERAL DESCRIPTION
Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue
for a burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Active
command, which is then followed by a Read or Write command. The address bits registered coincident with the active
command are used to select the bank and row to be accessed (BA0-BA2 select the bank; A0-A12(x16) or A0-A13(x8)
select the row). The address bits registered coincident with the Read or Write command are used to select the starting
column location A0-A9 for the burst access and to determine if the auto precharge A10 command is to be issued.
Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed information
covering device initialization, register definition, command descriptions and device operation.
FUNCTIONAL BLOCK DIAGRAM
RDQS, RDQS
DMa - DMb
Notes:
1. An:n = no. of address pins - 1
2. DQm: m = no. of data pins - 1
3. For x8 devices:
DMa - DMb = DM; DQSa - DQSb = DQS; DQSa - DQSb = DQS; RDQS, RDQS available only for x8
4. For x16 devices:
DMa - DMb = UDM, LDM; DQSa - DQSb = UDQS, LDQS; DQSa - DQSb = UDQS, LDQS


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